Bonding geometry engineering of metal–oxygen octahedra is a facile way of tailoring various functional properties of transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation and tilt of the octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications such as changes in thin‐film lattice parameters. In this study, a method to selectively engineer the octahedral bonding geometries is proposed, while maintaining other parameters that might implicitly influence the functional properties. A concept of octahedral tilt propagation engineering is developed using atomically designed SrRuO₃/SrTiO₃ (SRO/STO) superlattices. In particular, the propagation of RuO₆ octahedral tilt within the SRO layers having identical thicknesses is systematically controlled by varying the thickness of adjacent STO layers. This leads to a substantial modification in the electromagnetic properties of the SRO layer, significantly enhancing the magnetic moment of Ru. This approach provides a method to selectively manipulate the bonding geometry of strongly correlated oxides, thereby enabling a better understanding and greater controllability of their functional properties.

We investigated the electronic structures of ultrathin SrRuO₃ (SRO) films with n = 1, 2, 3, 4, and 8 monolayers (MLs) on SrTiO₃ substrates using O K-edge X-ray absorption spectroscopy (XAS). The intensities of the low-energy features reflect the strengths of the Ru 4d-O 2p orbital hybridization. The Ru 4d orbital state evolves with the increasing SRO thickness, exhibiting a crossover at approximately n = 2. For thick SRO films (n ≥ 3), this constitutes a metallic band, while for the 1 or 2 ML film, the band features shift to a higher energy to form a bandgap (> 0.2 eV), reflecting the emergent insulating nature. The polarization dependence of the peak intensities further shows that in the metallic films (n ≥ 3), Ru t_2g - O 2p hybridizations are strong and anisotropic with stronger (weaker) equatorial (apical) hybridizations, possibly owing to compressive strain effects from the SrTiO₃ substrate, while in thinner films (n ≤ 2), the hybridization effects become weak and rather isotropic because of the localization of Ru 4d orbitals. Thus, the evolution of anisotropic hybridizations in SRO films in the vicinity of the thickness-driven metal-insulator transition was substantiated.

The chemical and magnetic states of Fe/Fe₂O₃ thin films prepared by e-beam evaporation were investigated by using element-specific techniques, X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). It was clearly shown that the Fe layers are oxidized to form an antiferromagnetic (AFM) FeO_x<1, while the bottom oxide remained a weak ferromagnet (wFM) (α+γ)-type Fe₂O₃. Dependences of the peak intensities and lineshapes on the Fe thickness and measurement geometry further demonstrate that FeO_x<1 layers reside mostly at the interface realizing an FM (Fe)/AFM (FeO_x)/wFM (Fe₂O₃), whilst the spin directions lie in the sample plane for all the samples. The self-stabilized intermediate oxide can act as a physical barrier for spins to be injected into the wFM oxide, implying a substantial influence on tailoring the spin tunneling efficiency for spintronics application.