Chen Zhang

Prof. Chen Zhang

orcid

Research Focus & Metrics

Academic Career Length

10Years (2017-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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26 November 2018 in Applied Physics Letters
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Journal Article
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CZChen Zhang
Chen Zhang
SHSamuel C. Huberman
Samuel C. Huberman
SNShuai Ning
Shuai Ning
JPJonathan Pelliciari
Jonathan Pelliciari
RDRyan A. Duncan
Ryan A. Duncan
CRCaroline A. Ross
Caroline A. Ross
The thermal conductivity of self-assembled nanocomposite oxide films consisting of cobalt ferrite (CFO) spinel pillars grown within a single-crystal bismuth ferrite (BFO) perovskite matrix is described as a function of the volume fraction of the spinel. Single phase BFO and CFO had cross-plane thermal conductivities of 1.32 W m−1 K−1 and 3.94 W m−1 K−1, respectively, and the thermal conductivity of the nanocomposites increased with the CFO volume fraction within this range. A small increase (∼5%) in thermal conductivity for the pure CFO phase in the AC-demagnetized state was observed, suggesting possible magnon contributions. Steady state gray-medium based variance-reduced Monte Carlo simulations show consistent trends with experimental data on the dependence of thermal conductivity with the CFO volume fraction.

16 March 2022 in IEEE Photonics Journal
Verified
Journal Article
Open access
FWFuling Wang
Fuling Wang
XXXiao Xu
Xiao Xu
CZChen Zhang
Chen Zhang
CSChonglei Sun
Chonglei Sun
JZJia Zhao
Jia Zhao
An ultracompact and broadband silicon wavelength demultiplexer based on SWG-assisted directional coupler is designed and experimentally demonstrated for wavelength splitting of 1310 and 1550 nm. The embedded SWG enables significantly reduced footprint, due to the precise phase matching at 1550 nm and large phase mismatch at 1310 nm. As a result, the fabricated device has a length of only 9 μm, and provides high extinction ratios (ERs) of 23 dB and 19 dB at 1310 and 1550 nm, respectively. Its 3-dB bandwidths are 85 nm for O-band (ER > 15 dB) and 140 nm for C-band (ER > 10 dB).

1 July 2021 in AIP Advances
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Journal Article
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XZXiao Zhang
Xiao Zhang
CZChen Zhang
Chen Zhang
CSChonglei Sun
Chonglei Sun
XXXiao Xu
Xiao Xu
LDLiuge Du
Liuge Du
JZJia Zhao
Jia Zhao
A controllable phase shifter is an essential part of spin-wave (SW) logic devices. Magnetic domain walls (DWs) as magnonic waveguides have been used to study SW propagation in ultrathin ferromagnetic films. In this study, we present a channel for SW propagation that relies on magnetic DWs as natural waveguides and realize phase manipulation by voltage-controlled magnetic anisotropy (VCMA) at a lower excitation frequency with micromagnetic simulations. The system model is a double-layer magnetic film structure, containing two oppositely magnetized domains and an upper layer (Co20Fe60B20) coupled with the lower layer ([Co/Pd]) through exchange interaction. The pinning structure can effectively maintain the state of the waveguide during later operation without an additional magnetic field. By numerical micromagnetic simulation, we can clearly see that the exchange-dominated isotropic magnetostatic forward volume like SWs are confined in the Bloch-type DW. The phase accumulation by a propagating SW depends on the accumulated phase wave vector (k) and the distance traveled. Therefore, SWs accumulate more phase through DW waveguides covered by electrodes with different lengths. The phase of the SW is shifted after the SW passes through the voltage region, compared with the waveguide where a voltage is unapplied. As a result, the established phase shifter shows a phase difference of 2π by applying a voltage (E = 1 V/nm), and the length of the applied electrode is about 644 nm.

11 September 2017 in ACS Applied Materials & Interfaces
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Journal Article
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CZChen Zhang
Chen Zhang
DKDong Hun Kim
Dong Hun Kim
XHXiaohu Huang
Xiaohu Huang
XSXue Yin Sun
Xue Yin Sun
NANicolas M. Aimon
Nicolas M. Aimon
CRCaroline A. Ross
Caroline A. Ross

9 March 2025 in Micromachines
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Journal Article
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LLLi Liu
Li Liu
JZJia Zhao
Jia Zhao
CZChen Zhang
Chen Zhang
High-performance optical isolators are key components in photonic integrated circuits, with significant applications in nonlinear optical systems. We propose a design for a TE-mode optical isolator based on the AlGaAs-on-insulator platform. The isolator consists of non-reciprocal phase shift (NRPS) waveguides, reciprocal phase shift (RPS) waveguides, and multi-mode interference (MMI) couplers achieving low loss, high isolation, and wide bandwidth. Numerical simulations show that, at a wavelength of 1550 nm, the device provides a bandwidth of 91 nm at 30 dB isolation. The confinement factors for a magneto-optical (MO) waveguide were analyzed, and a detailed loss analysis revealed a total loss of 1.47 dB and a figure of merit (FoM) of 2.76 rad/dB. The manufacturing tolerances of the isolator are discussed referring to the requirement of stability and reliability in practical applications. This study provides an optimized design for high-performance TE-mode optical isolators in integrated photonic systems, which are well-suited for efficient and stable nonlinear optical applications.

18 April 2024 in Nanomaterials
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WCWanting Chen
Wanting Chen
LLLi Liu
Li Liu
JZJia Zhao
Jia Zhao
CZChen Zhang
Chen Zhang
An integrated optical isolator is a crucial part of photonic integrated circuits (PICs). Existing optical isolators, predominantly based on the silicon-on-insulator (SOI) platform, face challenges in integrating with active devices. We propose a broadband, compact TM mode Mach–Zehnder optical isolator based on InP-on-insulator platforms. We designed two distinct magneto-optical waveguide structures, employing different methods for bonding Ce:YIG and InP, namely O2 plasma surface activation direct wafer bonding and DVS-benzocyclobutene (BCB) adhesive bonding. Detailed calculations and optimizations were conducted to enhance their non-reciprocal phase shift (NRPS). At a wavelength of 1550 nm, the direct-bonded waveguide structure achieved a 30 dB bandwidth of 72 nm with a length difference of 0.256 µm. The effects of waveguide arm length, fabrication accuracy, and dimensional errors on the device performance are discussed. Additionally, manufacturing tolerances for three types of lithographic processes were calculated, serving as references for practical manufacturing purposes.