In this paper, the isothermal model of power MOS transistors offered by the producer of these devices and the electrothermal model of these devices proposed by the authors are presented. The results of experimental verification of both the models are given as well.
16 August 2010 in IEEE Transactions on Components and Packaging Technologies
In this paper, the nonlinear compact thermal model of power semiconductor devices based on the Cauer network is proposed. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the selected metal-oxide-semiconductor (MOS) power transistor at its various cooling conditions.
In this paper, the analytical description of the nonlinear thermal model of the semiconductor device considering the influence of the selected factors on its thermal resistance is proposed. The worked out nonlinear thermal model considers the influence of such factors as length of metal leads, solder area, dimensions of the heat-sink, ambient temperature, and dissipated power on the efficiency of heat transfer between the chip and the surrounding. The correctness of the worked out thermal model is verified experimentally for the selected types of semiconductor devices operating in different cooling conditions. In all the considered cases, the good agreement of the results of calculations and measurements is obtained.
22 February 2012 in IEEE Transactions on Power Electronics
In this paper, a new method for fast estimation of the characteristics of single-inductance dc-dc converters at the steady state with self-heating taken into account is proposed. This method is based on the special memoryless convolution algorithm. The method is described in detail. The theoretical considerations are illustrated with simulation results of buck and boost converters.
11 November 2016 in IEEE Transactions on Power Electronics
This paper presents the method of modeling single-inductor dc-dc converters with thermal phenomena in the inductor taken into account. The electrothermal models of an inductor and semiconductor devices in the form dedicated for SPICE are proposed. Using the proposed models, the electrothermal analysis of buck and boost converters was performed for the inductor with cores made of different ferromagnetic materials. It was proved that nonlinearity of the inductor characteristics and thermal phenomena occurring in this element should be taken into account when the converter operates at high frequency range (over 200 kHz), especially for the inductor with the powder core.