In recent years, the development of terahertz (THz) technology has attracted significant attention. Various tunable devices for THz waves (0.1 THz–10 THz) have been proposed, including devices that modulate the amplitude, polarization, phase, and absorption. Traditional metal materials are often faced with the problem of non-adjustment, so the designed terahertz devices play a single role and do not have multiple uses, which greatly limits their development. As an excellent phase change material, VO₂’s properties can be transformed by external temperature stimulation, which provides new inspiration for the development of terahertz devices. To address these issues, this study innovatively combines metamaterials with phase change materials, leveraging their design flexibility and temperature-induced phase transition characteristics. We have designed a THz intelligent absorber that not only enables flexible switching between multiple functionalities but also achieves precise performance tuning through temperature stimulation. Furthermore, we have taken into consideration factors such as the polarization mode, environmental temperature, structural parameters, and incident angle, ensuring the device’s process tolerance and environmental adaptability. Additionally, by exploiting the principle of localized surface plasmon resonance (LSPR) accompanied by local field enhancement, we have monitored and analyzed the resonant process through electric field characterization. In summary, the innovative approach and superior performance of this structure provide broader insights and methods for THz device design, contributing to its theoretical research value. Moreover, the proposed absorber holds potential for practical applications in electromagnetic invisibility, shielding, modulation, and detection scenarios.

In this paper, using the surface plasmon and Fabry–Pérot (FP) cavity, the design of a symmetric silicon grating absorber is proposed. The time-domain finite difference method is used for simulation calculations. The basic unit structure is a dielectric grating composed of silicon dioxide, metal and silicon. Through the adjustment of geometric parameters, we have achieved the best of the symmetric silicon grating absorber. A narrowband absorption peak with an absorption rate greater than 99% is generated in the 3000–5000 nm optical band, and the wavelength of the absorption peak is λ = 3750 nm. The physical absorption mechanism is that silicon light generates surface plasmon waves under the interaction with incident light, and the electromagnetic field coupling of surface plasmon waves and light causes surface plasmon resonance, thereby exciting strong light response modulation. We also explore the influence of geometric parameters and polarization angle on the performance of silicon grating absorbers. Finally, we systematically study the refractive index sensitivity of these structures. These structures can be widely used in optical filtering, spectral sensing, gas detection and other fields.