A systematic study on the use of 9,9-dialkylfluorene homopolymers (PFs) for large-diameter semiconducting (sc-) single-walled carbon nanotube (SWCNT) enrichment is the focus of this report. The enrichment is based on a simple three-step extraction process: (1) dispersion of as-produced SWCNTs in a PF solution; (2) centrifugation at a low speed to separate the enriched sc-tubes; (3) filtration to collect the enriched sc-SWCNTs and remove excess polymer. The effect of the extraction conditions on the purity and yield including molecular weight and alkyl side-chain length of the polymers, SWCNT concentration, and polymer/SWCNT ratio have been examined. It was observed that PFs with alkyl chain lengths of C10, C12, C14, and C18, all have an excellent capability to enrich laser-ablation sc-SWCNTs when their molecular weight is larger than ∼10 000 Da. More detailed studies were therefore carried out with the C12 polymer, poly(9,9-di-n-dodecylfluorene), PFDD. It was found that a high polymer/SWCNT ratio leads to an enhanced yield but a reduced sc-purity. A ratio of 0.5–1.0 gives an excellent sc-purity and a yield of 5–10% in a single extraction as assessed by UV-vis-NIR absorption spectra. The yield can also be promoted by multiple extractions while maintaining high sc-purity. Mechanistic experiments involving time-lapse dispersion studies reveal that m-SWCNTs have a lower propensity to be dispersed, yielding a sc-SWCNT enriched material in the supernatant. Dispersion stability studies with partially enriched sc-SWCNT material further reveal that m-SWCNTs : PFDD complexes will re-aggregate faster than sc-SWCNTs : PFDD complexes, providing further sc-SWCNT enrichment. This result confirms that the enrichment was due to the much tighter bundles in raw materials and the more rapid bundling in dispersion of the m-SWCNTs. The sc-purity is also confirmed by Raman spectroscopy and photoluminescence excitation (PLE) mapping. The latter shows that the enriched sc-SWCNT sample has a narrow chirality and diameter distribution dominated by the (10,9) species with d = 1.29 nm. The enriched sc-SWCNTs allow a simple drop-casting method to form a dense nanotube network on SiO₂/Si substrates, leading to thin film transistors (TFTs) with an average mobility of 27 cm² V⁻¹ s⁻¹ and an average on/off current ratio of 1.8 × 10⁶ when considering all 25 devices having 25 μm channel length prepared on a single chip. The results presented herein demonstrate how an easily scalable technique provides large-diameter sc-SWCNTs with high purity, further enabling the best TFT performance reported to date for conjugated polymer enriched sc-SWCNTs.

A new electron deficient building block, difluorobenzothiadiazole (FBT) was designed and synthesized for the first time. Two low band gap polymers containing this unit or benzothiadiazole (BT) and an electron rich unit, benzo[1,2-b:4,5-b′]dithiophene (BDT) were synthesized by Stille coupling reaction. It was found that fluorine substitution significantly lowered the energy levels but did not affect the UV absorption properties of the polymer. Comparatively, the fluorinated polymer showed a higher melting point and a reduced solubility. The electrical and photovoltaic properties of these polymers were studied by fabricating thin film transistors and polymer solar cells. The solar cell based on FBT polymer and PC₇₁BM gives power conversion efficiency up to 3.4% under AM 1.5 G illumination (100 mW cm⁻²).

A low band-gap alternating copolymer of indolocarbazole and benzothiadiazole-cored oligothiophene demonstrated balanced crystallinity and solubility; a solar cell combining this polymer with PC₆₁BM in a preliminary test demonstrated power conversion efficiencies of 3.6%.

A novel purification process for the enrichment of sc-SWCNTs that combines selective conjugated polymer extraction (CPE) with selective adsorption using silica gel, termed hybrid-CPE (h-CPE), has been developed, providing a high purity sc-SWCNT material with a significant improvement in process efficiency and yield. Using the h-CPE protocol, a greater than 5 fold improvement in yield can be obtained compared to traditional CPE while obtaining sc-SWCNT with a purity >99.9% as assessed by absorption spectroscopy and Raman mapping. Thin film transistor devices using the h-CPE derived sc-SWCNTs as the semiconductor possess mobility values ranging from 10–30 cm² V⁻¹ s⁻¹ and current ON/OFF ratio of 10⁴–10⁵ for channel lengths between 2.5 and 20 μm.

A new copolymer of dithienosilole (DTS) and dithienyl-s-tetrazine (TTz), PDTSTTz, has been designed and synthesized. This solution processable polymer shows a low band gap, strong absorption and good thermal stability. Solar cells from the blend of this polymer with PC₇₁BM showed power conversion efficiency (PCE) up to 4.2%.