Ocean wave height plays an important role in the operation status of ocean wave energy conversion systems. In this paper, the future continuous ocean wave height within 2~3 s is forecasted by three methods, the autoregressive moving average model (ARMA) method, backpropagation (BP) neural network method, and radial basis function (RBF) neural network method. Then, the error between suggested forecast results and corresponding measured results are compared by the root mean square error (RMSE), mean absolute error (MAE), and correlation coefficient R. The comparison result indicates that the RBF neural network method is preferred to the other two methods, having the advantage of high accuracy. Lastly, the reasons for the errors of the three forecasting methods are analyzed. This study signifies that the RBF neural network method is beneficial to the operation control and efficiency improvement of ocean wave energy conversion systems.

Ag-Ti₃SiC₂ composites are promising electrical contact materials, yet the atomic-scale interfacial behaviour between Ti₃SiC₂ and Ag remains poorly understood. Here, first-principles calculations were performed to investigate the interfacial stability, electronic structure, and alloying effects at the Ti₃SiC₂(0001)/Ag(111) interface. Surface-energy calculations for six terminations of Ti₃SiC₂(0001) show that the TiC(TiC) termination is preferred at low carbon chemical potential, whereas the TiC(TiSi) termination becomes the most stable once ΔμC exceeds −1.50 eV. Eighteen interface models combining the six terminations with three stacking sequences (OT, MT, and HCP) were constructed, and their work of adhesion (Wad) and equilibrium spacing (d₀) were determined by the Universal Binding Energy Relation and full structural relaxation. The HCP stacking is preferred for all terminations, and the C(TiC)-terminated HCP interface exhibits the highest work of adhesion among all configurations, with Wad = 9.25 J/m² at d₀ = 1.2 Å; relaxation enhances Wad by 10%–75%. Charge density, charge density difference, and partial density of states analyses reveal that the interfacial bonding is dominated by C 2p-Ag 4d hybridization accompanied by electron transfer from Ag and Ti atoms to the interfacial C atoms, which accounts for the adhesion hierarchy. Substitutional alloying with Cu, Ni, Zn, and Cr preferentially segregates into the interfacial Ag layer, where the defect formation energies, although positive, are the lowest, and Wad increases in the order Cu < Zn < Ni < Cr, reaching 11.0 J/m² for interfacial Cr, an enhancement of 19% over the pristine interface. The strengthening correlates directly with the filling of the dopant 3d band. These results provide theoretical guidance for the interfacial design of high-performance Ag-Ti₃SiC₂ electrical contact composites.