历峰 边

Prof. Dr. 历峰 边

orcid

Research Focus & Metrics

Academic Career Length

17Years (2010-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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20 May 2020 in Physica Status Solidi (a)
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Journal Article
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MZMin Zhou
Min Zhou
HQHaibing Qiu
Haibing Qiu
THTao He
Tao He
JZJianya Zhang
Jianya Zhang
WYWenxian Yang
Wenxian Yang
Yukun ZHAOYukun ZHAO
Yukun ZHAO

4 November 2021 in Nanomaterials
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Journal Article
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JZJianya Zhang
Jianya Zhang
MJMin Jiang
Min Jiang
历边历峰 边
历峰 边
DWDongmin Wu
Dongmin Wu
HQHua Qin
Hua Qin
SLShulong Lu
Shulong Lu
Underwater wireless optical communication (UWOC) is a wireless communication technology using visible light to transmit data in an underwater environment, which has wide applications. Based on lift-off (In,Ga)N nanowires, this work has proposed and successfully demonstrated a self-powered photoelectrochemical (PEC) photodetector (PD) with excellent transmissivity. The transparent functionality of the PD is critical for 360° omnidirectional underwater detection, which was realized by detaching the (In,Ga)N nanowires from the opaque epitaxial substrates to the indium tin oxide (ITO)/glass. It was also found that the insulating SiO2 layer can enhance the photocurrent by about 12 times. The core–shell structure of the nanowires is beneficial for generating carriers and contributing to the photocurrent. Furthermore, a communication system with ASCII code is set to demonstrate the PD detection in underwater communication. This work paves an effective way to develop 360° omnidirectional PDs for the wide applications in UWOC system and underwater photodetection.

26 February 2022 in Nanomaterials
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Journal Article
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XZxue zhang
xue zhang
ZXZhiwei Xing
Zhiwei Xing
WYWenxian Yang
Wenxian Yang
HQHaibing Qiu
Haibing Qiu
YGYing Gu
Ying Gu
ATAtsushi Tackeuchi
Atsushi Tackeuchi
Self-assembled growth of blue-green-yellow-red InGaN quantum dots (QDs) on GaN templates using plasma-assisted molecular beam epitaxy were investigated. We concluded that growth conditions, including small N2 flow and high growth temperature are beneficial to the formation of InGaN QDs and improve the crystal quality. The lower In/Ga flux ratio and lower growth temperature are favorable for the formation of QDs of long emission wavelength. Moreover, the nitrogen modulation epitaxy method can extend the wavelength of QDs from green to red. As a result, visible light emissions from 460 nm to 622 nm have been achieved. Furthermore, a 505 nm green light-emitting diode (LED) based on InGaN/GaN MQDs was prepared. The LED has a low external quantum efficiency of 0.14% and shows an efficiency droop with increasing injection current. However, electroluminescence spectra exhibited a strong wavelength stability, with a negligible shift of less than 1.0 nm as injection current density increased from 8 A/cm2 to 160 A/cm2, owing to the screening of polarization-related electric field in QDs.

2 October 2020 in Journal of Electronic Materials
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SJShan Jin
Shan Jin
XLXuefei Li
Xuefei Li
WYWenxian Yang
Wenxian Yang
YZYukun Zhao
Yukun Zhao
历边历峰 边
历峰 边
SLShulong Lu
Shulong Lu

1 May 2019 in Journal of Crystal Growth
Verified
Journal Article
Closed access
SJShan Jin
Shan Jin
XLXuefei Li
Xuefei Li
WYWenxian Yang
Wenxian Yang
历边历峰 边
历峰 边
SLShulong Lu
Shulong Lu

18 April 2010 in Journal of Shanghai University (English Edition)
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历边历峰 边
历峰 边
ZJZhao Jin
Zhao Jin