ZnO-Cu_xO core-shell radial heterojunction nanowire arrays were fabricated by a straightforward approach which combine two simple, cost effective and large-scale preparation methods: (i) thermal oxidation in air of a zinc foil for obtaining ZnO nanowire arrays and (ii) radio frequency magnetron sputtering for covering the surface of the ZnO nanowires with a Cu_xO thin film. The structural, compositional, morphological and optical properties of the high aspect ratio ZnO-Cu_xO core-shell nanowire arrays were investigated. Individual ZnO-Cu_xO core-shell nanowires were contacted with Pt electrodes by means of electron beam lithography technique, diode behaviour being demonstrated. Further it was found that these n-p radial heterojunction diodes based on single ZnO-Cu_xO nanowires exhibit a change in the current under UV light illumination and therefore behaving as photodetectors.

CuO–ZnO core–shell radial heterojunction nanowire arrays were obtained by a simple route which implies two cost-effective methods: thermal oxidation in air for preparing CuO nanowire arrays, acting as a p-type core and RF magnetron sputtering for coating the surface of the CuO nanowires with a ZnO thin film, acting as a n-type shell. The morphological, structural, optical and compositional properties of the CuO–ZnO core–shell nanowire arrays were investigated. In order to analyse the electrical and photoelectrical properties of the metal oxide nanowires, single CuO and CuO–ZnO core–shell nanowires were contacted by employing electron beam lithography (EBL) and focused ion beam induced deposition (FIBID). The photoelectrical properties emphasize that the p–n radial heterojunction diodes based on single CuO–ZnO core–shell nanowires behave as photodetectors, evidencing a time-depending photoresponse under illumination at 520 nm and 405 nm wavelengths. The performance of the photodetector device was evaluated by assessing its key parameters: responsivity, external quantum efficiency and detectivity. The results highlighted that the obtained CuO–ZnO core–shell nanowires are emerging as potential building blocks for a next generation of photodetector devices.

Staggered gap radial heterojunctions based on ZnO-Cu_xO core-shell nanowires are used as water stable photocatalysts to harvest solar energy for pollutants removal. ZnO nanowires with a wurtzite crystalline structure and a band gap of approximately 3.3 eV are obtained by thermal oxidation in air. These are covered with an amorphous Cu_xO layer having a band gap of 1.74 eV and subsequently form core-shell heterojunctions. The electrical characterization of the ZnO pristine and ZnO-Cu_xO core-shell nanowires emphasizes the charge transfer phenomena at the junction and at the interface between the nanowires and water based solutions. The methylene blue degradation mechanism is discussed taking into consideration the dissolution of ZnO in water based solutions for ZnO nanowires and ZnO-Cu_xO core-shell nanowires with different shell thicknesses. An optimum thickness of the Cu_xO layer is used to obtain water stable photocatalysts, where the ZnO-Cu_xO radial heterojunction enhances the separation and transport of the photogenerated charge carriers when irradiating with UV-light, leading to swift pollutant degradation.

High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited.