The intricate nanostructured surface of black silicon (BSi) has advanced photodetector technology by enhancing light absorption. Herein, we delve into the latest advancements in BSi surface modification techniques, specifically focusing on their profound impact on light trapping and resultant photodetector performance improvement. Established methods such as metal-assisted chemical etching, electrochemical etching, reactive ion etching, plasma etching, and laser ablation are comprehensively analyzed, delving into their mechanisms and highlighting their respective advantages and limitations. We also explore the impact of BSi on the emerging applications in silicon (Si)-based photodetectors, showcasing their potential for pushing the boundaries of light-trapping efficiency. Throughout this review, we critically evaluate the trade-offs between fabrication complexity and performance enhancement, providing valuable insights for future development in this rapidly evolving field. This knowledge on the BSi surface modification and its applications in photodetectors can play a crucial role in future implementations to substantially boost light trapping and the performance of Si-based optical detection devices consequently.

SU-8 polymers are promising materials for various applications due to their low cost, excellent thermal stability, and outstanding mechanical properties. Cross-linking of SU-8 is a crucial process that determines the properties of the materials. This study investigates the effect of cross-linking of free-standing SU-8 films on optical transmission and PL emission under various curing conditions. Our findings show that an increase in the cross-linking density reduces optical transmission and causes a red shift of the PL emission band peaks. By directly measuring the optical response of the isolated SU-8, we remove any uncertainty due to the substrate’s presence. Moreover, we show that optical transmission and PL spectroscopy are two non-distractive techniques that can be employed to monitor the curing of the SU-8. This finding enhances our understanding of the cross-linking process in SU-8 and paves the way to further enhance the properties of the SU-8 polymer for various electronics and optoelectronics applications.

ZnO and MgZnO nanoparticles were prepared by the co-precipitation method utilizing zinc sulfate heptahydrate and magnesium sulfate heptahydrate; structural measurements were also carried out. An x-ray diffraction (XRD) study indicated that no peaks for other possible phases such as MgO or MgZn intermetallic compounds indicating pure wurtzite structure. All nanoparticles crystallized in a hexagonal wurtzite structure with different orientation diffraction peaks; the main peaks were (100), (002), and (101). Grain size (D) increased with increasing Mg concentrations. A scanning electron microscopy (SEM) analysis revealed that nanoparticle size increased by increasing the Mg concentration in a good qualitative with Scherrer equation and not only the size even the grain shape changed. In addition, optical measurements were taken infer that the band gap energy (Eg), extracted from Tauc’s plot, decreases with increasing of the Mg concentration doped, and found to be between 3.255 eV and 3.169 eV. The photoluminescence (PL) emission spectra show two peaks at the ultraviolet and green regions.