Gerhard Hobler

Dr. Gerhard Hobler

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Research Focus & Metrics

Academic Career Length

40Years (1987-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 December 2023 in Applied Physics Reviews
Verified
Journal Article
Open access
KHKatja Höflich
Katja Höflich
GHGerhard Hobler
Gerhard Hobler
FAFrances Allen
Frances Allen
TWTom Wirtz
Tom Wirtz
Gemma RiusGemma Rius
Gemma Rius
GHGregor Hlawacek
Gregor Hlawacek
The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques, and applications. By viewing FIB developments through the lens of various research communities, we aim to identify future pathways for ion source and instrumentation development, as well as emerging applications and opportunities for improved understanding of the complex interplay of ion–solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interest and will support future fruitful interactions connecting tool development, experiment, and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

1 March 1995 in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Journal Article
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GHGerhard Hobler
Gerhard Hobler

16 December 2016 in Physical Review B
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Journal Article
Open access
PDF file
KNK. Nordlund
K. Nordlund
FDF. Djurabekova
F. Djurabekova
GHGerhard Hobler
Gerhard Hobler
It is well established that when energetic ions are moving in crystals, they may penetrate much deeper if they happen to be directed in some specific crystal directions. This ‘channeling’ effect is utilized for instance in certain ion beam analysis methods and has been described by analytical theories and atomistic computer simulations. However, there have been very few systematic studies of channeling in directions other than the principal low-index ones. We present here a molecular dynamics-based approach to calculate ion channeling systematically over all crystal directions, providing ion ‘channeling maps’ that easily show in which directions channeling is expected. The results show that channeling effects can be quite significant even at energies below 1 keV, and that in many cases, significant planar channeling occurs also in a wide range of crystal directions between the low-index principal ones. In all of the cases studied, a large fraction (∼20–60%) of all crystal directions show channeling. A practical implication of this is that modern experiments on randomly oriented nanostructures will have a large probability of channeling. It also means that when ion irradiations are carried out on polycrystalline samples, channeling effects on the results cannot a priori be assumed to be negligible. The maps allow for easy selection of good ‘nonchanneling’ directions in experiments or alternatively finding wide channels for beneficial uses of channeling. We implement channeling theory to also give the fraction of channeling directions in a manner directly comparable to the simulations. The comparison shows good qualitative agreement. In particular, channeling theory is very good at predicting which channels are active at a given energy. This is true down to sub-keV energies, provided the penetration depth is not too small.

1 May 2007 in MRS Bulletin
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Journal Article
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WMWarren J. MoberlyChan
Warren J. MoberlyChan
DADavid P. Adams
David P. Adams
MAMichael J. Aziz
Michael J. Aziz
GHGerhard Hobler
Gerhard Hobler
TSThomas Schenkel
Thomas Schenkel

1 February 2003 in Materials Science in Semiconductor Processing
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Journal Article
Closed access
GHGerhard Hobler
Gerhard Hobler
GOG. Otto
G. Otto

18 May 2007 in Nanotechnology
Verified
Journal Article
Closed access
HKHeung-Bae Kim
Heung-Bae Kim
GHGerhard Hobler
Gerhard Hobler
ASAndreas Steiger
Andreas Steiger
ALAlois Lugstein
Alois Lugstein
EBEmmerich Bertagnolli
Emmerich Bertagnolli