Wen Feng

Dr. Wen Feng


Research Focus & Metrics

Academic Career Length

4Years (2023-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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9 May 2023 in Crystals
Verified
Journal Article
Open access
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ZWZhiyuan Wu
Zhiyuan Wu
LZLijie Zuo
Lijie Zuo
HZHongliang Zhang
Hongliang Zhang
YHYiqiang He
Yiqiang He
CLChengwen Liu
Chengwen Liu
WFWen Feng
Wen Feng
Due to exceptional conductivity, lightweight nature, corrosion resistance, and various other advantages, Cu/Al bimetallic composites are extensively utilized in the fields of communication, new energy, electronics, and other industries. To solve the problem of poor metallurgical bonding of Cu/Al bimetallic composites caused by high-temperature oxidation of Cu, different coating thicknesses of Ni layer on Cu rods were used to fabricate the Cu/Al bimetallic composite by gravity casting. The effect of liquid–solid volume ratio and coating thickness on microstructure and properties of a Cu/Al bimetallic composite were investigated in this study. The results indicated that the transition zone width increased from 242.3 μm to 286.3 μm and shear strength increased from 17.8 MPa to 30.3 MPa with a liquid–solid volume ratio varying from 8.86 to 50. The thickness of the transition zone and shear strength increased with the coating thickness of the Ni layer varying from 1.5 μm to 3.8 μm, due to the Ni layer effectively preventing oxidation on the surface of the Cu rod and promoting the metallurgical bonding of the Cu/Al interface. The presence of a residual Ni layer in the casted material hinders the diffusion process of the Cu and Al atom. Therefore, the thickness of the transition zone and shear strength exhibited a decreasing trend as the coating thickness of the Ni layer increased from 3.8 μm to 5.9 μm. Shear fracture observation revealed that the initiation and propagation of shear cracks occurred within the transition zone of the Cu/Al bimetallic composite.

29 February 2024 in Materials
Verified
Journal Article
Open access
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WFWen Feng
Wen Feng
JZJunjie Zhou
Junjie Zhou
SWShihao Wang
Shihao Wang
SSSun Sun
Sun Sun
TZTianyu Zhao
Tianyu Zhao
YJYingying Jiang
Yingying Jiang
In this study, the grain boundary character distribution (GBCD) of a B10 alloy was optimized, employing thermomechanical processing consisting of friction stirring processing (FSP) and annealing treatment. Using electron backscatter diffraction, the effects of rotational speed of FSP and annealing time on the evolution of GBCD were systematically investigated. The GBCD evolution was analyzed concerning various parameters, such as the fraction of low-Σ coincidence site lattice (CSL) boundaries, the average number of grains per twin-related domain (TRD), the length of longest chain (LLC), and the triple junction distribution. The experimental results revealed that the processing of a 1400 rpm rotational speed of FSP followed by annealing at 750 °C for 60 min resulted in the optimum grain boundary engineering (GBE) microstructure with the highest fraction of low-Σ CSL boundaries being 82.50% and a significantly fragmented random boundary network, as corroborated by the highest average number of grains per TRD (14.73) with the maximum LLC (2.14) as well as the highest J2/(1 − J3) value (12.76%). As the rotational speed of FSP increased from 600 rpm to 1400 rpm, the fraction of low-Σ CSL boundaries monotonously increased. The fraction of low-Σ CSL boundaries first increased and then decreased with an increase in annealing time. The key to achieving GBE lies in inhibiting the recrystallization phenomenon while stimulating abundant multiple twinning events through strain-induced boundary migration.

24 April 2026 in Crystals
Verified
Journal Article
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WFWen Feng
Wen Feng
SSSun Sun
Sun Sun
TZTianyu Zhao
Tianyu Zhao
JZJunjie Zhou
Junjie Zhou
ZHZhengyu Han
Zhengyu Han
This study presented an application of thermomechanical processing consisting of cold rolling and subsequent annealing in SP2215 heat-resistant steel to investigate the effects of thermomechanical processing parameters on the evolution of grain boundary character distribution (GBCD) and to elucidate the relationship between GBCD and creep properties. The experimental results show that the optimal process, characterized by 10% cold rolling reduction followed by annealing at 1100 °C for 10 min, was determined to significantly increase the fraction of low-Σ coincidence site lattice (CSL) boundaries up to 74.27%, and effectively disrupt the connectivity of the random boundary network, as corroborated by the highest average twin-related domain (TRD) size of 42.58 μm and average number of grains per TRD of 7.28. Such a modified GBCD leads to a notable enhancement in creep performance, resulting from the induction of a high fraction of low-Σ CSL boundaries and the disruption of the random boundary network, which effectively inhibits intergranular crack initiation and propagation during creep deformation.

17 August 2026 in Journal of Advanced Materials Research
Verified
Journal Article
Open access
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YLYi luo
Yi luo
WHWeiye He
Weiye He
JXJilin Xu
Jilin Xu
LZLijie Zuo
Lijie Zuo
FSFeng Shang
Feng Shang
QMQianyi Ma
Qianyi Ma
Pristine two-dimensional (2D) GaN is non-magnetic, which limits its direct use in semiconductor spintronics. Here, first-principles calculations were used to screen 3d transition-metal substitution (TM = Sc-Zn) at 6.25 at.% and 9.375 at.% and to evaluate biaxial strain from \(-3%\) to \(3%\). Co substitution produced the most favorable magnetic semiconductor response among the screened dopants. The two concentrations yielded magnetic moments of \(8.00\) and \(12.00\) \(\mu_B\) per supercell and band gaps of \(0.80\) and \(0.55\) eV, respectively. Biaxial strain preserved the magnetic order while tuning the band gaps. In the \(6.25\) at.% Co-doped system, the gap reached \(0.89\) eV at \(2%\) tensile strain and became direct at \(3%\) tensile strain. These calculations identify Co substitution and moderate biaxial strain as a promising theoretical route for tuning the magnetic and electronic properties of monolayer GaN.