Hisayuki Imamura

Mr. Hisayuki Imamura

orcid

Research Focus & Metrics

Academic Career Length

4Years (2023-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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4 October 2023 in Journal of the American Ceramic Society
Verified
Journal Article
Closed access
HIHisayuki Imamura
Hisayuki Imamura
TKTsunehiro Kawata
Tsunehiro Kawata
SHSawao Honda
Sawao Honda
YIYuji Iwamoto
Yuji Iwamoto

6 November 2023 in Crystals
Verified
Journal Article
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PDF file
HIHisayuki Imamura
Hisayuki Imamura
KKKazuhiro Kura
Kazuhiro Kura
TKTsunehiro Kawata
Tsunehiro Kawata
SHSawao Honda
Sawao Honda
TAToru Asaka
Toru Asaka
YIYuji Iwamoto
Yuji Iwamoto
Oxide additive-free α- → β-Si3N4 phase transformation of a high-purity commercial α-Si3N4 powder was investigated at 1600 to 1900 °C under a nitrogen pressure of 980 kPa. The XRD analysis revealed that the α- → β-Si3N4 phase transformation proceeded mainly at 1900 °C, and was completed by the extensive 1900 °C heat treatment for 20 h. This phase transformation temperature was 33 °C lower than the theoretical α-Si3N4 dissociation temperature and was confirmed as completely different from that often discussed for the liquid-phase sintering of α-Si3N4 powder by direct comparison with the phase transformation behavior of a reference powder, α-Si3N4 powder doped with 1 mol% Y2O3. The unique α- → β-Si3N4 phase transformation was further studied by a set of characterization techniques including elemental analysis, HAADF-STEM and STEM-EDS analyses. The results strongly suggested that the oxide additive-free α- → β-Si3N4 phase transformation was governed by the formation of a metastable solid solution between α-Si3N4 and impurity oxygen of approximately 0.6 wt%, which promoted the dissociation below the theoretical α-Si3N4 dissociation temperature to afford thermodynamically favorable β-Si3N4. Along with the β-Si3N4 formation, the impurity oxygen concentrated at the grain boundaries was released from the sample via the grain boundary diffusion to afford high-purity β-Si3N4.

25 June 2024 in Materials Research Bulletin
Verified
Journal Article
Closed access
TSTakeshi Shimada
Takeshi Shimada
HIHisayuki Imamura
Hisayuki Imamura
HMHironari Matsumoto
Hironari Matsumoto
MFMasashi Fujii
Masashi Fujii
MGMasayuki Gonda
Masayuki Gonda
TNTetsuya Nakamura
Tetsuya Nakamura

15 April 2023 in Journal of the American Ceramic Society
Verified
Journal Article
Closed access
HIHisayuki Imamura
Hisayuki Imamura
TKTsunehiro Kawata
Tsunehiro Kawata
SHSawao Honda
Sawao Honda
YIYuji Iwamoto
Yuji Iwamoto

12 October 2023 in Preprints.org
Verified
Preprint
Open access
PDF file
HIHisayuki Imamura
Hisayuki Imamura
KKKazuhiro Kura
Kazuhiro Kura
TKTsunehiro Kawata
Tsunehiro Kawata
SHSawao Honda
Sawao Honda
TAToru Asaka
Toru Asaka
YIYuji Iwamoto
Yuji Iwamoto
Oxide additive-free α- ⇀ β-Si3N4 phase transformation of a high-purity commercial α-Si3N4 powder was investigated at 1600 to 1900 ℃ under nitrogen pressure of 980 kPa. The XRD analysis revealed that the α- ⇀ β-Si3N4 phase transformation proceeded mainly at 1900 ℃, and was completed by the extensive 1900 ℃-heat treatment for 20 h. This phase transformation temperature was 33 ℃ lower than the theoretical α-Si3N4 dissociation temperature and confirmed as completely different from that often discussed for the liquid phase sintering of α-Si3N4 powder by direct comparison with the phase transformation behavior of a reference powder, α-Si3N4 powder doped with 1 mol% Y2O3. The unique α- ⇀ β-Si3N4 phase transformation was further studied by a set of characterization techniques including elemental analysis, HAADF-STEM and STEM-EDS analyses. The results strongly suggested that the oxide additive-free α- ⇀ β-Si3N4 phase transformation was governed by the for-mation of metastable solid solution between α-Si3N4 and impurity oxygen of approximately 0.6 wt%, which promoted the dissociation below the theoretical α-Si3N4 dissociation temperature to afford thermodynamically favorable β-Si3N4. Along with the β-Si3N4 formation, the impurity oxygen was concentrated at the Si3N4 crystal grain boundaries and subsequently released from the sample via the grain boundary diffusion.