In the present paper, we apply a blind fitting algorithm to model two-dimensional energy-incidence angle maps of soft x-ray resonant reflectivity measured in nanoscale epitaxial multilayers of multiferroic ε-Fe2O3 grown by pulsed laser deposition. The possibility of fitting the spectral shape of the complex refraction index across the Fe L3 absorption edge without having an initial guess about the optical constants has been demonstrated. The spectral shape fitting of the real (f1) and imaginary (f2) parts of the atomic scattering factor has been carried out by using a specially designed software utilizing OpenCL fast calculations on graphical processing units. The Kramers-Kronig relations between f1 and f2 are automatically taken into account by the fitting algorithm. A reasonable agreement between blindly generated and reference scattering factor spectra derived independently from an x-ray absorption spectroscopy experiment has been demonstrated. The blind fitting has been compared with the alternative refinement routines, in which small free variations of the reference spectral shapes (or no variations at all) have been allowed. The presented approach to the resonant x-ray reflectometry modeling makes it unnecessary to acquire the optical constant spectral shapes in advance and, thus, is especially helpful when such spectra cannot be physically measured, e.g., for a buried layer of a multilayer system.

The present paper describes the technological peculiarities relevant to the nucleation and further epitaxial growth of the metastable epsilon phase of iron oxide by means of pulsed laser deposition (PLD). The orthorhombic epsilon ferrite ε-Fe₂O₃ is an exotic member of a large family of iron oxide polymorphs, which attracts extensive attention nowadays due to its ultra-high magneto-crystalline anisotropy and room temperature multiferroic properties. Continuing the series of previous publications dedicated to the fabrication of ε-Fe₂O₃ films on GaN, this present work addresses a number of important requirements for the growing conditions of these films. Among the most sensitive technological parameters, the growth temperature must be high enough to aid the nucleation of the orthorhombic phase and, at the same time, low enough to prevent the thermal degradation of an overheated ε-Fe₂O₃/GaN interface. Overcoming the contradicting growth temperature requirements, an alternative substrate-independent technique to stabilize the orthorhombic phase by mild aluminum substitution is proposed. The advantages of this technique are demonstrated by the example of ε-Fe₂O₃ films PLD growth carried out on sapphire—the substrate that possesses a trigonal lattice structure and would normally drive the nucleation of the isostructural and energetically more favorable trigonal α-Fe₂O₃ phase. The real-time profiling of high-energy electron diffraction patterns has been extensively utilized throughout this work to keep track of the orthorhombic-to-trigonal balance being the most important feed-back parameter at the growth optimization stage.

THz spectroscopy reveals ferroelectric soft mode behavior in SrTiO₃/AlFeO₃ heterostructure compared to SrTiO₃ films. Intermediate AlFeO₃ layers prevent degradation of the intrinsic dielectric response of SrTiO₃ layers in the heterostructure.