We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical and scripting basis. The results evidences that the piecewise linear window function can aptly simulate the memristor characteristics pertaining to RRAM application. However, the nonlinear window function could exhibit the nonlinear phenomenon in simulation only at the lower magnitude of control parameter. This has motivated us to propose a new nonlinear window function for emulating the simulation model of the memristor. Interestingly, the proposed window function is scalable up to f(x) = 1 and exhibits the nonlinear behavior at higher magnitude of control parameter. Moreover, the simulation results of proposed nonlinear window function are encouraging and reveals the smooth nonlinear change from LRS to HRS and vice versa and therefore useful for the neuromorphic applications.

In this paper, we report the effect of the write voltage and frequency on memristor-based resistive random access memory (RRAM). The above-said parameters have been investigated on the linear drift model of the memristor. With a variation of write voltage from 0.2 to 1.2 V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz, the corresponding effects on memory window, low resistance state (LRS) and high resistance state (HRS) have been reported. Thus, the lifetime (τ) reliability analysis of memristor-based RRAM is carried out using the above results. It is found that the HRS is independent of the write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase the fact that the memristor possesses higher memory window and lifetime (τ) in the higher voltage with lower frequency region, which has been attributed to less data losses in the memory architecture.

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.

In the Kesterite family, the Cu₂ZnSn(S,Se)₄ (CZTSSe) thin-film solar cells (TFSCs) have demonstrated the highest device efficiency with non-stoichiometric cation composition ratios. These composition ratios have a strong influence on the structural, optical, and electrical properties of the CZTSSe absorber layer. So, in this work, a machine learning (ML) approach is employed to evaluate effect composition ratio on the device parameters of CZTSSe TFSCs. In particular, the bi-metallic ratios like Cu/Sn, Zn/Sn, Cu/Zn, and overall Cu/(Zn+Sn) cation composition ratio are investigated. To achieve this, different machine learning algorithms, such as decision trees (DTs) and classification and regression trees (CARTs), are used. In addition, the output performance parameters of CZTSSe TFSCs are predicted by both continuous and categorical approaches. Artificial neural networks (ANN) and XGBoost (XGB) algorithms are employed for the continuous approach. On the other hand, support vector machine and k-nearest neighbor’s algorithms are also used for the categorical approach. Through the analysis, it is observed that the DT and CART algorithms provided a critical composition range well suited for the fabrication of highly efficient CZTSSe TFSCs, while the XGB and ANN showed better prediction accuracy among the tested algorithms. The present work offers valuable guidance towards the integration of the ML approach with experimental studies in the field of TFSCs.