Kerr microcombs have drawn substantial interest as mass-manufacturable, compact alternatives to bulk frequency combs. This could enable the deployment of many comb-reliant applications previously confined to laboratories. Particularly enticing is the prospect of microcombs performing optical frequency division in compact optical atomic clocks. Unfortunately, it is difficult to meet the self-referencing requirement of microcombs in these systems owing to the approximately terahertz repetition rates typically required for octave-spanning comb generation. In addition, it is challenging to spectrally engineer a microcomb system to align a comb mode with an atomic clock transition with a sufficient signal-to-noise ratio. Here we adopt a Vernier dual-microcomb scheme for optical frequency division of a stabilized ultranarrow-linewidth continuous-wave laser at 871 nm to an ~235 MHz output frequency. This scheme enables shifting an ultrahigh-frequency (~100 GHz) carrier-envelope offset beat down to frequencies where detection is possible and simultaneously placing a comb line close to the 871 nm laser—tuned so that, if frequency doubled, it would fall close to the clock transition in ¹⁷¹Yb⁺. Our dual-comb system can potentially combine with an integrated ion trap towards future chip-scale optical atomic clocks.

We develop a stress-released stoichiometric silicon nitride (Si₃N₄) fabrication process for dispersion-engineered integrated silicon photonics. To relax the high tensile stress of a thick Si₃N₄ film grown by low-pressure chemical vapor deposition (LPCVD) process, we grow the film in two steps and introduce a conventional dense stress-release pattern onto a ∼400nm-thick Si₃N₄ film in between the two steps. Our pattern helps minimize crack formation by releasing the stress of the film along high-symmetry periodic modulation directions and helps stop cracks from propagating. We demonstrate a nearly crack-free ∼830nm-thick Si₃N₄ film on a 4” silicon wafer. Our Si₃N₄ photonic platform enables dispersion-engineered, waveguide-coupled microring and microdisk resonators, with cavity sizes of up to a millimeter. Specifically, our 115µm-radius microring exhibits an intrinsic quality (Q)-factor of ∼2.0×10⁶ for the TM₀₀ mode and our 575µm-radius microdisk demonstrates an intrinsic Q of ∼4.0×10⁶ for TM modes in 1550nm wavelengths.

Optical pulse shaping stands as a formidable technique in ultrafast optics, radio-frequency photonics, and quantum communications. While existing systems rely on bulk optics or integrated platforms with planar waveguide sections for spatial dispersion, they face limitations in achieving finer (few- or sub-GHz) spectrum control. These methods either demand considerable space or suffer from pronounced phase errors and optical losses when assembled to achieve fine resolution. Addressing these challenges, we present a foundry-fabricated six-channel silicon photonic shaper using microresonator filter banks with inline phase control and high spectral resolution. Leveraging existing comb-based spectroscopic techniques, we devise a system to mitigate thermal crosstalk and enable the versatile use of our on-chip shaper. Our results demonstrate the shaper’s ability to phase-compensate six comb lines at tunable channel spacings of 3, 4, and 5 GHz. Specifically, at a 3 GHz channel spacing, we showcase the generation of arbitrary waveforms in the time domain. This scalable design and control scheme holds promise in meeting future demands for high-precision spectral shaping capabilities.

The silicon nitride (Si₃N₄) platform, demonstrating a moderate third-order optical nonlinearity and a low optical loss compared with those of silicon, is suitable for integrated quantum photonic circuits. However, it is challenging to develop a crack-free, wafer-scale, thick Si₃N₄ platform in a single deposition run using a subtractive complementary metal-oxide-semiconductor (CMOS)-compatible fabrication process suitable for dispersion-engineered quantum light sources. In this paper, we demonstrate our unique subtractive fabrication process by introducing a stress-release pattern prior to the single Si₃N₄ film deposition. Our Si₃N₄ platform enables 950 nm-thick and 8 μm-wide microring resonators supporting whispering-gallery modes for quantum light sources at 1550 nm wavelengths. We report a high photon-pair generation rate of ∼1.03 MHz/mW², with a high spectral brightness of ∼5×10⁶ pairs/s/mW²/GHz. We demonstrate the first heralded single-photon measurement on the Si₃N₄ platform, which exhibits a high quality of conditional self-correlation g_H⁽²⁾(0) of 0.008 ± 0.003.

Recent developments in Kerr microcombs may pave the way to a future with fully stabilized ultralow size, weight, and power consumption (SWaP) frequency combs. Nevertheless, Kerr microcombs are still hindered by a bandwidth/repetition rate trade-off. That is, the octave bandwidth needed for self-referencing is typically realized only with ∼THz repetition rates beyond the range of standard commercial photodetectors. The carrier envelope offset frequency is often likewise too high for detection. Dual-comb techniques for the measurement of THz repetition rates have made exciting progress, but the f_CEO detection problem remains largely unaddressed. In this work, utilizing a Vernier dual-comb configuration, we demonstrate simultaneous detection of the electronically divided repetition rate and f_CEO carrier envelope offset frequency of an octave-spanning microcomb. This, in turn, could help usher optical atomic clocks, low-noise microwave generators, and optical frequency synthesizers into various real-world applications.

Polarization-entangled photon pair sources exhibiting nonlocal quantum correlations are crucial to developments of quantum computing, quantum communications, quantum cryptography, and quantum sensing technologies. On-chip polarization entanglement generation thus constitutes one enabling component for integrated quantum photonic circuits. Here, we present to our knowledge the first polarization-entangled photon pair sources in a silicon nitride platform for integrated quantum photonic circuits. We demonstrate the generation of a polarization-entangled state by adopting a configuration comprising dual microring resonators, with nearly degenerate transverse electric and transverse magnetic polarized cavity resonances for the two resonators coupled in series to a common bus waveguide. We measure two-photon interference and quantum state tomography to characterize the polarization entanglement of the generated state and to reconstruct the density matrix. Our experiments reveal a visibility of 96.4% ± 3.1% and of 86.7% ± 3.2% with the |H⟩ and |V⟩ bases, respectively (and a visibility of 89.4% ± 6.6% and 81.3% ± 7.3% with the |D⟩ and |A⟩ bases), and a fidelity of ∼75.7% from the tomographic reconstructed density matrix.