A crucial requirement for quantum-information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin-based all-electrical two-qubit gate consisting of single-spin rotations and interdot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple-qubit gates.

High-density silicon composite anodes show large volume changes upon charging/discharging triggering the reformation of the solid electrolyte interface (SEI), an interface initially formed at the silicon surface. The question remains how the reformation process and accompanied material evolution, in particular for industrial up-scalable cells, impacts cell performance. Here, we develop a correlated workflow incorporating X-ray microscopy, field-emission scanning electron microscopy tomography, elemental imaging and deep learning-based microstructure quantification suitable to witness the structural and chemical progression of the silicon and SEI reformation upon cycling. The nanometer-sized SEI layer evolves into a micron-sized silicon electrolyte composite structure at prolonged cycles. Experimental-informed electrochemical modelling endorses an underutilisation of the active material due to the silicon electrolyte composite growth affecting the capacity. A chemo-mechanical model is used to analyse the stability of the SEI/silicon reaction front and to investigate the effects of material properties on the stability that can affect the capacity loss.

Advanced anode material designs utilizing dual phase alloy systems like Si/FeSi₂ nano-composites show great potential to decrease the capacity degrading and improve the cycling capability for Lithium (Li)-ion batteries. Here, we present a multi-scale characterization approach to understand the (de-)lithiation and irreversible volumetric changes of the amorphous silicon (a-Si)/crystalline iron-silicide (c-FeSi₂) nanoscale phase and its evolution due to cycling, as well as their impact on the proximate pore network. Scattering and 2D/3D imaging techniques are applied to probe the anode structural ageing from nm to μm length scales, after up to 300 charge-discharge cycles, and combined with modeling using the collected image data as an input. We obtain a quantified insight into the inhomogeneous lithiation of the active material induced by the morphology changes due to cycling. The electrochemical performance of Li-ion batteries does not only depend on the active material used, but also on the architecture of its proximity.

Residual stresses and their distribution within individual layers are a general concern in thin film technology. Here we use a recently developed ion beam layer removal method to determine the stress profile in a thin film system. The system consists of a thin tungsten and titanium nitride film deposited on a silicon substrate. The stresses are calculated from the deflection of a focused ion beam machined cantilever by means of Euler–Bernoulli beam theory and finite element simulations coupled with optimizing algorithms, and the results of the two methods are critically compared. Case studies taking into account manufacturing related variations in the cantilever geometry, different boundary conditions and relaxation during cantilever fabrication are performed. We find that the stress distribution in the thin film system is strongly influenced by the boundary conditions and the cantilever fabrication, while manufacturing related variations in the cantilever geometry only slightly influence the stress distribution

Electron spin confined in quantum dots is a promising candidate for experimental qubits. Aiming at realizing a three spin-qubit system, we designed split micromagnets suitable for the lateral triple quantum dots. From numerical simulations of the stray magnetic field distribution, field gradients $\sim 0.8\text{T}/\mu \text{m}$ and differences of in-plane components $\sim 10\text{mT}$ can be attained, which enable the electrical and addressable manipulation of three qubits. Furthermore, this technique can be applied for up to 25 qubits in realistic multiple quantum dots. For the first step of implementing such three-qubit systems, a relevant triple quantum dot device has been fabricated and characteristic charge states were observed.