Magnetoelectric (ME) cantilever resonators have been successfully employed as magnetic sensors to measure low magnetic fields; however, high relative resolution enabling magnetometry in high magnetic fields is lacking. Here, we present on-chip silicon based ME microelectromechanical (MEMS) doubly clamped resonators which can be utilized as high sensitivity, low power magnetic sensors. The resonator is a fully suspended thin film ME heterostructure composed of an active magnetoelastic layer (Fe_0.3Co_0.7), which is strain coupled to a piezoelectric signal/excitation layer (AlN). By controlling uniaxial stress arising from the large magnetoelastic properties of magnetostrictive FeCo, a magnetically driven shift of the resonance frequency of the first fundamental flexural mode is observed. The theoretical intrinsic magnetic noise floor of such sensors reaches a minimum value of 35 $pT/\sqrt{Hz}$ . This approach shows a magnetic field sensitivity of ∼5 Hz/mT in a bias magnetic field of up to 120 mT. Such sensors have the potential in applications required for enhanced dynamic sensitivity in high-field magnetometry.

The hysteretic behavior of interfacial magnetic moments for CoFe thin films with varying roughness is determined in an element specific manner by monitoring the applied magnetic field dependence of the specular and off-specular (diffuse) contributions to the x-ray resonant magnetic scattering signal. Increasing the interfacial roughness generates a larger variation of the relative coercive field associated with the interfacial moment in comparison to the bulk.

Free-standing CoFe thin-film doubly clamped stress reconfigurable resonators were investigated as a function of magnetic field and pressure. A large uniaxial anisotropy resulting from residual uniaxial tensile stress, as revealed from magnetic hysteresis loops, leads to an easy magnetization axis aligned along the length of the beams. The quality factor of the driven resonator beams under vacuum is increased by 30 times, leading to an enhanced signal-to-noise ratio and a predicted reduction in the intrinsic magnetic noise by a factor of 6, potentially reaching as low as ∼25 pT/√Hz at 1 Torr. Stress reconfigurable sensors operating under vacuum could thus further improve the limit of detection and advance development of magnetic field sensing technology.

Magnetoelectric (ME)-based magnetometers have garnered much attention as they boast ultra-low-power systems with a small form factor and limit of detection in the tens of picotesla. The highly sensitive and low-power electric readout from the ME sensor makes them attractive for near DC and low-frequency AC magnetic fields as platforms for continuous magnetic signature monitoring. Among multiple configurations of the current ME magnetic sensors, most rely on exploiting the mechanically resonant characteristics of a released ME microelectromechanical system (MEMS) in a heterostructure device. Through optimizing the resonant device configuration, we design and fabricate a fixed–fixed resonant beam structure with high isolation compared to previous designs operating at ~800 nW of power comprised of piezoelectric aluminum nitride (AlN) and magnetostrictive (Co_1-xFe_x)-based thin films that are less susceptible to vibration while providing similar characteristics to ME-MEMS cantilever devices. In this new design of double-clamped magnetoelectric MEMS resonators, we have also utilized thin films of a new iron–cobalt–hafnium alloy (Fe_0.5Co_0.5)_0.92Hf_0.08 that provides a low-stress, high magnetostrictive material with an amorphous crystalline structure and ultra-low magnetocrystalline anisotropy. Together, the improvements of this sensor design yield a magnetic field sensitivity of 125 Hz/mT when released in a compressive state. The overall detection limit of these sensors using an electric field drive and readout are presented, and noise sources are discussed. Based on these results, design parameters for future ME MEMS field sensors are discussed.

Angular dependence of magnetic field response of fully suspended resonant microelectromechanical double-clamped magnetoelectric beams was investigated as the basis for a vector magnetometer utilizing the magnetically induced change in fundamental resonance frequency. Strain-coupled magnetostrictive iron cobalt (FeCo) and piezoelectric aluminum nitride layers together constitute a magnetoelectric heterostructure with a high magnetic field sensitivity of 70 Hz/mT along the beam axis and a transfer function of 47 V/T at 10 Hz. The fundamental frequency shift to an external magnetic field is found to be strongly anisotropic with a relative variation of more than 3% between perpendicular and parallel field orientations with respect to the long axis of the beam at a field of 100 mT. This design can form the basis for an on-chip high sensitivity vector magnetometer operating with ultra-low power when multiplexed with two or more resonators.

Materials with high magnetoelectric coupling are attractive for use in engineered multiferroic heterostructures with applications such as ultra-low power magnetic sensors, parametric inductors, and non-volatile random-access memory devices. Iron–cobalt alloys exhibit both high magnetostriction and high saturation magnetization that are required for achieving significantly higher magnetoelectric coupling. We report on sputter-deposited (Fe0.5Co0.5)1−xHfx (x = 0 – 0.14) alloy thin films and the beneficial influence of Hafnium alloying on the magnetic and magnetostrictive properties. We found that co-sputtering Hf results in the realization of the peening mechanism that drives film stress from highly tensile to slightly compressive. Scanning electron microscopy and x-ray diffraction along with vibrating sample magnetometry show reduction in coercivity with Hf alloying that is correlated with reduced grain size and low film stress. We demonstrate a crossover from tensile to compressive stress at x ∼ 0.09 while maintaining a high magnetostriction of 50 ppm and a low coercive field of 1.1 Oe. These characteristics appear to be related to the amorphous nature of the film at higher Hf alloying.