High mobility, scalable and even transparent thin-film transistors (TFTs) are always being pursued in the field of large area electronics. While excimer laser-beam-scanning can crystallize amorphous Si (a-Si) into high mobility poly-Si, it is limited to small areas. We here demonstrate a robust nano-droplet-scanning strategy that converts an a-Si:H thin film directly into periodic poly-Si nano-channels, with the aid of well-coordinated indium droplets. This enables the robust batch-fabrication of high performance Fin-TFTs with a high hole mobility of >100 cm² V⁻¹ s⁻¹ and an excellent subthreshold swing of only 163 mV dec⁻¹, via a low temperature <350 °C thin film process. More importantly, precise integration of tiny poly-Si channels, measuring only 60 nm in diameter and 2 μm apart on glass substrates, provides an unprecedented transparent Si-based TFT technology to visible light, which is widely sought for the next generation of high aperture displays and fully transparent electronics. The successful implementation of such a reliable nano-droplet-scanning strategy, rooted in the strength of nanoscale growth dynamics, will enable eventually the batch-manufacturing and upgrade of high performance large area electronics in general, and high definition and scalable flat-panel displays in particular.

Seeking long cycle lifetime and high rate performance are still challenging aspects to promote the application of silicon-loaded lithium ion batteries (LIBs), where optimal structural and compositional design are critical to maximize a synergistic effect in composite core–shell nanowire anode structures. We here propose and demonstrate a high quality conformal coating of an amorphous Si (a-Si) thin film over a matrix of highly cross-linked CuO nanowires (NWs). The conformal a-Si coating can serve as both a high capacity storage medium and a high quality binder that joins crossing CuO NWs into a continuous network. And the CuO NWs can be reduced into highly conductive Cu cores in low temperature H₂ annealing. In this way, we have demonstrated an excellent cycling stability that lasts more than 700 (or 1000) charge/discharge cycles at a current density of 3.6 A g⁻¹ (or 1 A g⁻¹), with a high capacity retention rate of 80%. Remarkably, these Cu/a-Si core–shell anode structures can survive an extremely high charging current density of 64 A g⁻¹ for 25 runs, and then recover 75% initial capacity when returning to 1 A g⁻¹. We also present the first and straightforward experimental proof that these robust highly-cross-linked core–shell networks can preserve the structural integrity even after 1000 runs of cycling. All these results indicate a new and convenient strategy towards a high performance Si-loaded battery application.

Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on high-precision lithography, which is not applicable for large area electronics. In this work, we demonstrate that ultrathin and short silicon nanowires channels can be created through a local-curvature-modulated catalytic growth, where a planar silicon nanowires is directed to jump over a crossing step. During the jumping dynamic, the leading droplet undergoes significant stretching, producing a short necking segment of <100 nm in length, with a reduced diameter from approximately 45 nm to 8 × 10⁷ and a sharper subthreshold swing of 70 mV/dec, thanks to a stronger gating effect in the middle channel and markedly improved electric contacts at the thicker source/drain ends. These findings mark the pioneering experimental demonstration of catalytic growth acting as a deterministic fabrication method for precisely crafting engineered FET channels, ideally fitting the requirements of high-performance large-area displays and sensors.

Miniature spectrometers provide promising potential for on-chip or in situ optical analysis. In recent years there has been significant progress towards reducing the size and improving the performance of these spectrometers. The workhorse is light splitting components. This work has been led primarily by the innovative use of new light analysis strategies and new nanostructured materials with the notable increase in the spectral range and resolution. This review summarizes the latest developments classified as monochromatic, modulated and computational types of miniature spectrometers according to the spectral extraction methods. Particularly, we highlight the recent advances in designing of sophisticated gratings, resonators, interferometers and photonic crystals (PCs), the emerging of novel nanostructured materials and improvement in the computational spectra reconstruction algorithms. We examine the different approaches employed to reduce size and enhance light–matter interaction of the final spectrometers, especially emphasizing the trade-off between various metrics of the spectrometer including device footprint, measurable spectral range, spectral resolution, sensitivity as well as complementary metal oxide semiconductor compatibility. We also examine potential applications of on-chip spectrometers and outlook where further developments are required.

Soft electronics, which are designed to function under mechanical deformation (such as bending, stretching, and folding), have become essential in applications like wearable electronics, artificial skin, and brain-machine interfaces. Crystalline silicon is one of the most mature and reliable materials for high-performance electronics; however, its intrinsic brittleness and rigidity pose challenges for integrating it into soft electronics. Recent research has focused on overcoming these limitations by utilizing structural design techniques to impart flexibility and stretchability to Si-based materials, such as transforming them into thin nanomembranes or nanowires. This review summarizes key strategies in geometry engineering for integrating crystalline silicon into soft electronics, from the use of hard silicon islands to creating out-of-plane foldable silicon nanofilms on flexible substrates, and ultimately to shaping silicon nanowires using vapor–liquid–solid or in-plane solid–liquid–solid techniques. We explore the latest developments in Si-based soft electronic devices, with applications in sensors, nanoprobes, robotics, and brain-machine interfaces. Finally, the paper discusses the current challenges in the field and outlines future research directions to enable the widespread adoption of silicon-based flexible electronics.