Regioselective nucleophilic addition of electron rich aromatics to the β-position of acetal carbon of p-benzo-quinone mono O,S-acetal was achieved by modifying the acetal moiety.

The thicknesses of aluminum, copper, and gold thin films on silicon substrates have been measured with an electron probe microanalyzer. $k$ ratio versus thickness calibration curves are obtained by a Monte Carlo simulation of electron scattering. The simulation results based on two energy loss models are compared. One is the continuous slowing down approximation model and another is the hybrid model for the discrete and the continuous energy loss processes. Inner shell ionizations and free electron excitations are selected out for the discrete process in the hybrid model. In both models the Mott cross section and the Gryzinski cross section are used for elastic collisions and ionizations, respectively. The exact film/substrate boundary condition is considered. The characteristic and continuum fluorescence corrections are also included in the simulation. The simulation results agree well with experimental ones measured with a quartz oscillator. Effects of the introduction of the discrete energy loss process and the fluorescence correction are discussed in comparison between simulation and experiment.

The abnormal grain growth of steel, which is occurs during carburization, adversely affects properties such as heat treatment deformation and fatigue strength. This study aimed to control abnormal grain growth by controlling the materials and processes. Thus, it was necessary to investigate the effects of microstructure, precipitation, and heat treatment conditions on abnormal grain growth. We simulated abnormal grain growth using the cellular automaton (CA) method. The simulations focused on the grain boundary anisotropy and dispersion of precipitates. We considered the effect of grain boundary misorientation on boundary energy and mobility. The dispersion state of the precipitates and its pinning effect were considered, and grain growth simulations were performed. The results showed that the CA simulation reproduced abnormal grain growth by emphasizing the grain boundary mobility and the influence of the dispersion state of the precipitate on the occurrence of abnormal grain growth. The study findings show that the CA method is a potential technique for the prediction of abnormal grain growth.

A Ni–Y 2 O 3 -stabilized ZrO 2 (Ni–YSZ) cermet anode was fabricated for solid oxide fuel cells (SOFCs) by conventional ceramic processing using NiO–YSZ composite particles. Microstructures of the anode were carefully characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Ni–YSZ cermet anode consists of fine YSZ connections with a continuous pore structure, which provides paths for the conduction of oxygen ions on the surface of the Ni network, as well as that of electrons and gaseous species. No amorphous phases were present at the interface between Ni and YSZ, and there was an orientation relationship between the Ni and YSZ grains, (111) Ni //(111) YSZ . The cermet anode showed high electrical performance at 800°C. These results indicate that the electrochemical activity of the Ni–YSZ cermet anode is enhanced with the present microstructure.

A sacrificial layer must be removed in order to release a freestanding structure from a substrate. Adhesion of a freestanding structure to a substrate often occurs in the release process. A new sacrificial layer process is developed in order to reduce the adhesion. A photoresist film is used as a sacrificial layer and micromachine structures are fabricated by Ni electroplating. Before fabricating a freestanding structure, the photoresist film is exposed in order to retain small columns after development. The release process consists of the following two steps. First, the sacrificial layer is removed by a conventional wet development. The freestanding structures are supported by small resist columns. Next, the small resist columns are removed by O₂ plasma. Since only the small resist area is removed by plasma ashing, the ashing time can be reduced to 1/4 of that required for the entire resist area ashing. A cantilever beam of 750 µm length can be fabricated without adhesion by the new process. The fabricated cantilevers can be vibrated by applying a sinusoidal voltage. The resonant frequency of the 750-µm-long cantilever is 21 kHz. The resonant frequencies of the cantilever of various beam lengths are examined.