AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K², in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.

This Letter reports on an advanced out-of-plane bending mode for aluminum-nitride (AlN)-actuated cantilevers. Devices of different thickness were fabricated and characterized by optical and electrical measurements in air and liquid media having viscosities up to 615 cP and compared to the classical out-of-plane bending and torsional modes. Finite element method eigenmode analyses were performed showing excellent agreement with the measured mode shapes and resonance frequencies. Quality factors (Q-factor) and the electrical behavior were evaluated as a function of the cantilever thickness. A very high Q-factor of about 197 was achieved in deionized water at a low resonance frequency of 336 kHz, being up to now, the highest quality factor reported for cantilever sensors in liquid media. Compared to the quality factor of the common fundamental out-of-plane bending mode, a 5 times higher Q-factor was achieved. Furthermore, the strain related conductance peak of the roof tile-shaped mode is superior. Compared to any out-of-plane bending mode, this combination of most beneficial properties is unique and make this mode superior for a large variety of resonator-based sensing applications.

In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

Optical cavities are of central importance in numerous areas of physics, including precision measurement, cavity optomechanics and cavity quantum electrodynamics. The miniaturisation and scaling to large numbers of sites is of interest for many of these applications, in particular for quantum computation and simulation. Here we present the first scaled microcavity system which enables the creation of large numbers of highly uniform, tunable light-matter interfaces using ions, neutral atoms or solid-state qubits. The microcavities are created by means of silicon micro-fabrication, are coupled directly to optical fibres and can be independently tuned to the chosen frequency, paving the way for arbitrarily large networks of optical microcavities.