A new approach to the fabrication of graphene field emitters on a variety of substrates at room temperature and in an ambient environment is demonstrated. The required shape and orientation of the graphene flakes along the field are created by the blister-based laser-induced forward transfer of CVD high-quality single-layer graphene. The proposed technique allows the formation of emitting crumpled graphene patterns without losing the quality of the initially synthesized graphene, as shown by Raman spectroscopy. The electron field emission properties of crumpled graphene imprints 1 × 1 mm² in size were studied. The transferred graphene flakes demonstrated good adhesion and emission characteristics.

Conductive graphitized grooves on the dielectric surface of diamond have been created by KrF excimer laser radiation. The advantages of such a circuit board in high-field applications is rather limited because the crystal surface has a relatively low electrical breakdown threshold. To increase the electrical strength, a method of encapsulating surface conductive graphitized structures by chemical vapor deposition of an epitaxial diamond layer has been proposed and realized. The quality of the growth diamond is proved by Raman spectroscopy. A comparative study of the electrical resistivity of graphitized wires and the breakdown fields between them before and after diamond growth was carried out. The proposed technique is crucial for diamond-based high-field electro-optical devices, such as THz photoconductive emitters.