Recent investigations of fundamental electronic properties (especially the carrier transport mechanisms) of Si nanocrystal embedded in the amorphous SiC films are highly desired in order to further develop their applications in nano-electronic and optoelectronic devices. Here, Boron-doped Si nanocrystals embedded in the amorphous SiC films were prepared by thermal annealing of Boron-doped amorphous Si-rich SiC films with various Si/C ratios. Carrier transport properties in combination with microstructural characteristics were investigated via temperature dependence Hall effect measurements. It should be pointed out that Hall mobilities, carrier concentrations as well as conductivities in films were increased with Si/C ratio, which could be reached to the maximum of 7.2 cm²/V∙s, 4.6 × 10¹⁹ cm⁻³ and 87.5 S∙cm⁻¹, respectively. Notably, different kinds of carrier transport behaviors, such as Mott variable-range hopping, multiple phonon hopping, percolation hopping and thermally activation conduction that play an important role in the transport process, were identified within different temperature ranges (10 K~400 K) in the films of different Si/C ratio. The changes from Mott variable-range hopping process to thermally activation conduction process with temperature were observed and discussed in detail.

Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities \({\mu }_{\mathrm{Hall}}\) of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm² V⁻¹, which could be ascribed to the reduction in surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities \({\mu }_{\mathrm{H}}(T)\) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. A comprehensive investigation was conducted to examine the distinct carrier transport properties in B-doped Ge NC films, and a detailed discussion was presented, focusing on the scattering mechanisms involved in the transport process.

Boron (B)-doped germanium nanocrystals (Ge NCs) films with various doping concentrations were prepared via the plasma-enhanced chemical vapor deposition (PECVD) technique followed by a thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities \({\mu }_{Hall}\) of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm²∙V^− 1, which could be ascribed to the reduction of surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities \({\mu }_{H}\left(T\right)\) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. A detailed investigation was carried out for the different carrier transport properties in B-doped Ge NCs films and further discussion with emphasis on the scattering mechanisms in the transport process were proposed.