Europium-doped bismuth silicate (Bi₄Si₃O₁₂) phosphor has been prepared by microwave irradiation method and its crystal structure is determined using Rietveld method. As-prepared phosphor consists of spherical, monodispersed particles with few agglomeration, high crystallinity, and narrow grain size distribution. The phosphor can be efficiently excited in the wavelength range of 260–400 nm, which matched well with the emission wavelengths of NUV LED chips. The photoluminescence spectra exhibit the highest emission peak at 703 nm originating from ⁵D₀ → ⁷F₄ transition of Eu³⁺ under NUV excitation. The luminescence lifetime for Bi₄Si₃O₁₂: 2 at% Eu³⁺ phosphor decreases from 2.11 to 1.86 ms with increasing temperature from 10 to 498 K. This behavior of decays is discussed in terms of radiative and nonradiative decays dependence on temperature. The thermal quenching mechanism of ⁵D₀ emission of Eu³⁺ in Bi₄Si₃O₁₂ phosphor is a crossover process from the ⁵D₀ level of Eu³⁺ to a ligand-to-europium (O²⁻ → Eu³⁺) charge transfer state. The quantum efficiency of the phosphor under 393 nm excitation is found to be 14.5%, which is higher than that of the commercial red phosphors Y₂O₃: Eu³⁺, Y₂O₂S: Eu³⁺. The temperature effect on CIE coordinate was discussed in order to further investigate the potential applications.

An inorganic/organic CABB/Ni-MOF hybrid photocatalyst was fabricated. Due to the efficient charge separation, high reduction potential preservation, and the improved CO₂ adsorption, the CABB/Ni-MOF hybrid showed high CO₂ photoreduction activity.