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<mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>TaN</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>TaNx ultrathin film deposited by plasma-enhanced atomic layer deposition (PE-ALD). A four-point bend delamination test and a pull-off tensile test are used to study the interfacial strength of the PE-ALD thin film with copper. According to X-ray photoelectron spectroscopy and Auger electron spectroscopy, a new chemical phase with a very small nitrogen content, possibly <mml:math display="inline"><mml:mrow><mml:mi>β</mml:mi><mml:msub><mml:mrow><mml:mtext>-TaN</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>β-TaNx , is formed on the PE-ALD <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>TaN</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>TaNx thin film after the RTA treatment. The increase in the Ta/N atomic ratio in the RTA-treated <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>TaN</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>TaNx thin film significantly improves the adhesion of the <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>TaN</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>TaNx film with the sputter-deposited Cu layer. However, the hydrogen-plasma-treated <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>TaN</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>TaNx thin film shows a slight decrease in nitrogen content but still demonstrates better adhesion with the Cu layer compared with the as-deposited one. While the Cu overlayer on the RTA-treated PE-ALD <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>TaN</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>TaNx thin film can sustain the thermal anneal at <mml:math display="inline"><mml:mrow><mml:mn>600</mml:mn><mml:mo>°</mml:mo><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math>600°C , the one on the as-deposited <mml:math display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>TaN</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>TaNx thin film exhibits voiding even at a temperature as low as <mml:math display="inline"><mml:mrow><mml:mn>400</mml:mn><mml:mo>°</mml:mo><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math>400°C .No biography provided yet