Chengt Luo

Dr. Chengt Luo

orcid

Research Focus & Metrics

Academic Career Length

13Years (2014-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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24 July 2018 in Materials Research Letters
Verified
Journal Article
Open access
WCWei-Yi Chang
Wei-Yi Chang
CCChing-Chang Chung
Ching-Chang Chung
CLChengt Luo
Chengt Luo
TKTaeyang Kim
Taeyang Kim
YYYohachi Yamashita
Yohachi Yamashita
Xiaoning JiangXiaoning Jiang
Xiaoning Jiang
In this paper, 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-30%PT) single crystal samples were poled using an alternating current (electric field) poling (ACP) method. Compared to the traditional poling method, the piezoelectric coefficient, free and clamped dielectric constants were improved more than 21%. X-ray diffraction result suggests the existence of monoclinic phase (MA) in ACP samples and piezoresponse force microscopy (PFM) result further depicts the finer engineered domain structures. The ACP sample also showed the unique phase transition sequences during the depoling process. Our work could provide a novel domain engineered method to enhance piezoelectric properties of PMN-PT single crystal. GRAPHICAL ABSTRACT IMPACT STATEMENT Piezoelectric and dielectric properties of relaxor-PT single crystals can be significantly enhanced by employing the new alternating current poling method, attributing to the unique heterogenous domain structure containing unprecedented domain wall density.

29 April 2019 in Applied Physics Letters
Verified
Journal Article
Closed access
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HWHaotian Wan
Haotian Wan
CLChengt Luo
Chengt Luo
WCWei-Yi Chang
Wei-Yi Chang
YYYohachi Yamashita
Yohachi Yamashita
Xiaoning JiangXiaoning Jiang
Xiaoning Jiang
In this work, the piezoelectric and dielectric properties of [001]-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals under alternating current poling (ACP) at different temperatures were studied. The piezoelectric coefficients (d33 ∼ 1930 pC/N, d31 ∼ −850 pC/N) and free dielectric permittivity (εT33/ε0 ∼ 7570) reached their highest values when the poling temperature (Tpoling) was 70 °C. Compared with traditional direct current electric field poling at 20 °C, 70 °C-ACP samples showed an enhancement of 40%, 35%, and 49% for d33, d31, and εT33/ε0, respectively. Meanwhile, d33 and εT33/ε0 were enhanced by about 9% when Tpoling increased from 20 °C to 70 °C under ACP, while d31 remained the same value and the dielectric loss was lowered from 0.29% to 0.22%. Moreover, ACP samples with different Tpoling have similar electromechanical coupling factors (k31 ∼ 0.44, kt ∼ 0.60). A discussion of the mechanism for the ACP enhancement was based on the domain observation using piezoresponse force microscopy, and the results showed that the domain densities of ACP samples with different Tpoling were positively correlated with their piezoelectric properties. This work demonstrated the enormous potential of ACP optimization for relaxor-PT single crystal applications.

4 November 2019 in Applied Physics Letters
Verified
Journal Article
Open access
PDF file
CLChengt Luo
Chengt Luo
HWHaotian Wan
Haotian Wan
WCWei-Yi Chang
Wei-Yi Chang
YYYohachi Yamashita
Yohachi Yamashita
APAlisa R. Paterson
Alisa R. Paterson
Xiaoning JiangXiaoning Jiang
Xiaoning Jiang
Alternating current (electric field) poling (ACP) was applied on [001]-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-0.3PT) single crystal samples with dimensions of 5 × 1.25 × 1.25 mm3 (with electrodes on the 1.25 × 1.25 mm2 surfaces), and the influence of ACP frequency (fACP) was studied. Compared to those from traditional direct (electric field) poling samples, the piezoelectric coefficient (d33) and free dielectric constant (εT33/ε0) of ACP samples could gain up to a 67% increase to 3200 pC/N and 10 500, respectively. The influence of fACP was studied on two main aspects: saturated properties and dynamic saturation process. In general, ACP samples with lower fACP had higher saturated d33, εT33/ε0, and coupling factor k33, as well as lower dielectric loss and faster saturation speed. The ACP dynamics during the saturation process were studied by measuring the polarization-vs-electric field hysteresis loops (P-E loops). The P-E loops illustrated that the coercive field of ACP samples could be further tuned from 1.84 kV/cm to 3.03 kV/cm by changing fACP (0.1–10 Hz). This work demonstrated the enormous potential of ACP optimization in relaxor-PT single crystal-based low-frequency transducer applications.

8 March 2021 in Applied Physics Letters
Verified
Journal Article
Closed access
PDF file
HWHaotian Wan
Haotian Wan
CLChengt Luo
Chengt Luo
CCChing-Chang Chung
Ching-Chang Chung
YYYohachi Yamashita
Yohachi Yamashita
Xiaoning JiangXiaoning Jiang
Xiaoning Jiang
Alternating current poling (ACP) was performed on Gen III relaxor-PT Mn-doped Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (Mn: PIN-PMN-PT) single crystals with the poling direction of [001]. Experimental results proved that ACP could bring property enhancement to both k31 and k33 mode crystals. Compared to those from traditional direct current poling (DCP), ACP with the optimized conditions (20 kV/cm, 0.1 Hz, and 20 cycles) enhanced the dielectric and piezoelectric properties of k31-mode mode crystals by more than 30%, where the enhanced free dielectric constant and piezoelectric coefficient d33 reached 5300 and 1750 pC/N, respectively. Furthermore, replacing DCP with ACP could increase the advantages of Gen III relaxor-PT. The coupling factors k31 and k33 were enhanced to 0.472 and 0.915, the mechanical quality factor Qm was enhanced by 17%, and the depoling temperature was raised by 17 °C to 123 °C. In the following mechanism study, in situ x-ray diffraction (XRD) combined with the temperature-dependent dielectric constant measurement proved the introduction of the monoclinic phases after ACP, while piezoresponse force microscopy (PFM) observation showed “2R”-like “2M” domain morphologies in ACP single crystals. Both these intrinsic and extrinsic factors are believed to be the keys to the mechanisms of property enhancement behind ACP. This study proved that ACP is an effective property enhancement method suitable for Gen III relaxor-PT single crystals and will promote its applications in high-temperature and high-power devices.

9 May 2022 in Applied Physics Letters
Verified
Journal Article
Open access
PDF file
HWHaotian Wan
Haotian Wan
CLChengt Luo
Chengt Luo
HKHwang-Pill Kim
Hwang-Pill Kim
CCChing-Chang Chung
Ching-Chang Chung
WCWei-Yi Chang
Wei-Yi Chang
Xiaoning JiangXiaoning Jiang
Xiaoning Jiang
The overpoling effect of alternating current poling (ACP) was studied on [001]-orientated rhombohedral Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 (PMN-0.26PT) single crystals. Our experimental results showed that the property enhancement from the ACP was remarkable only when the poling cycle number (NL) was kept low. When ACP was continued after the saturation, dielectric and piezoelectric properties gradually dropped down to traditional direct current poled levels or even lower. Such a decrease in material properties caused by the large NL during ACP was defined as the “overpoling effect of ACP” in this study. The following lattice symmetry and domain structure characterization studies were performed through x-ray diffraction (XRD) and piezoelectric force microscopy (PFM) to find the origin of the overpoling effect. The XRD measurements combined with temperature dependence of dielectric properties demonstrated that the field-induced phase transition continued when the samples became overpoled. Further PFM measurements illustrated that the domain density of the overpoled ACP sample was significantly lower than that of the normal one, while the “2R” domain configuration was maintained through the ACP process. In addition, the hysteresis loop characterization indicated large decreases in the coercive fields. The discovered overpoling effect of ACP could help us understand the mechanisms of ACP and optimize the ACP process.

1 January 2020 in Acta Materialia
Verified
Journal Article
Closed access
CLChengt Luo
Chengt Luo
WCWei-Yi Chang
Wei-Yi Chang
MGMin Gao
Min Gao
CCChih-Hao Chang
Chih-Hao Chang
JLJiefang Li
Jiefang Li
Xiaoning JiangXiaoning Jiang
Xiaoning Jiang