Yu Zhu

Ms. Yu Zhu

orcid

Research Focus & Metrics

Academic Career Length

4Years (2023-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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3 November 2024 in Carbon Neutralization
Verified
Journal Article
Open access
QYQuan Yin
Quan Yin
XCXiaoling Cui
Xiaoling Cui
LHLing Hu
Ling Hu
YKYueqin Kong
Yueqin Kong
XZXiaojuan Zhang
Xiaojuan Zhang
SLShiyou Li
Shiyou Li
The solvent‐rich solvent sheath in low‐concentration electrolytes (LCEs) not only results in high desolvation energy of Li+, but also forms organic‐rich solid electrolyte interface film (SEI) with poor Li+ conductivity, which hinders Li+ transport at the electrode‐electrolyte interface and greatly limits the application of LCEs. Here, the electrochemical performance of the LCEs is enhanced by dual interfacial modification with LiNO3 and vinylene carbonate (VC) additives. Results show that LiNO3 is preferentially reduced at about 1.65 V to form an inorganic‐rich but incomplete SEI inner layer. The formation of Li3N and LiNxOy inorganic components helps to achieve rapid Li+ transport in the SEI film, and the bare electrode surface caused by the incomplete SEI inner layer provides a place for the subsequent decomposition of VC. Then, at a lower potential of about 0.73 V, VC is reduced to generate the poly(VC)‐rich SEI outer layer, which provides lithium‐philic sites and greatly weakens the interaction between Li+ and ethylene carbonate (EC). The interaction modulates the Li+ solvation structure at the interface and reduces the desolvation energy of Li+. This ingenious design of the bilayer SEI film greatly enhances Li+ transport and inhibits the decomposition of traditional carbonate solvents and the swelling of graphite. As a result, the electrochemical performance of the battery using 0.5 M LiPF6 EC/diethyl carbonate (DEC) + 0.012 M LiNO3 + 0.5 vt% VC is improved to a higher level than the one using 1.0 M LiPF6 EC/DEC electrolyte. This research expands the design strategy and promising applications of LCEs by constructing a favorable SEI to enhance Li+ transport at the electrode‐electrolyte interface.

10 March 2023 in IEEE Transactions on Microwave Theory and Techniques
Verified
Journal Article
Closed access
ZLZheng Li
Zheng Li
LXLi Xiaochun
Li Xiaochun
ZWZe-Ming Wu
Ze-Ming Wu
YZYu Zhu
Yu Zhu
JMJun-Fa Mao
Jun-Fa Mao
High-speed link consisting of drivers and interconnects is essential for high-speed data transmission. In this article, a surrogate modeling technique based on graph neural network (GNN) and recurrent neural network (RNN) is proposed for signal integrity (SI) analysis of high-speed links with variable physical parameters and variable topologies. First, GNN extracts global features that can fully characterize components of the high-speed link from their topologies and physical parameters. Second, RNN takes the extracted global features and the excitation waveforms as inputs to predict the response waveforms. Finally, the well-trained GNN-RNN surrogate models of components of the high-speed link are cascaded as the entire surrogate model of the high-speed link. Numerical examples of the dri-ver model, the interconnect model, and the entire high-speed link model are provided for validation. It is shown that the proposed GNN-RNN surrogate models achieve low mean squared errors (MSEs), mean absolute errors (MAEs), and high efficiency.

17 April 2023 in IEEE Transactions on Components, Packaging and Manufacturing Technology
Verified
Journal Article
Closed access
YZYu Zhu
Yu Zhu
LXLi Xiaochun
Li Xiaochun
JMJun-Fa Mao
Jun-Fa Mao
In this paper, a mode composite substrate integrated coaxial line (MCSICL) is proposed for transmitting fundamental mode and first high-order mode in dual frequency bands. The MCSICL consists of substrate integrated coaxial line (SICL) and periodic L-shaped spoof surface plasmon polariton (SSPP) structure etched on the inner conductor of the SICL. By introducing the L-shaped SSPP structure, the bandwidth of the fundamental mode of the SICL can be suppressed without changing the cut-off frequency of the first high-order mode. Therefore, the proposed MCSICL can transmit signals at the low-frequency band with the fundamental mode and at the high-frequency band with the first high-order mode. The equivalent circuit model is built to analyze the propagation properties of the MCSICL. In addition, to excite the two modes independently, a grounded coplanar waveguide (GCPW) to MCSICL transition and a microstrip line (ML) to MCSICL transition are designed. The MCSICL with the transitions is fabricated under the printed circuit boards (PCB) process. Measurement results show that the MCSICL can propagate the fundamental mode from dc to 30 GHz and the first high-order mode from 42 to 60 GHz, and the isolation between the two modes is larger than 30 dB.

18 October 2024 in Journal of Circuits, Systems and Computers
Verified
Journal Article
Closed access
YZYu Zhu
Yu Zhu
LXLi Xiaochun
Li Xiaochun
JMJunfa Mao
Junfa Mao

13 February 2024 in Electronics
Verified
Journal Article
Open access
PDF file
YZYu Zhu
Yu Zhu
LXLi Xiaochun
Li Xiaochun
In this paper, a dual-band integrated bandpass filter (DI-BPF) based on a mode composite substrate integrated coaxial line (MCSICL) is proposed for a large frequency ratio. The low-frequency bandpass filter is formed by incorporating an SICL line and a gap into the MCSICL, operating in the fundamental mode of the MCSICL. The high-frequency bandpass filter is formed by introducing grounded vias into the MCSICL, operating in the first high-order mode of the MCSICL. To guide the design, the equivalent circuit models of the low- and high-frequency bandpass filters are built. Based on the equivalent circuit models, the DI-BPF is synthesized for a large frequency ratio. The transitions from the DI-BPF to ground coplanar waveguides (GCPWs) are designed for the low- and high-frequency bandpass filters. The DI-BPF with the transitions is fabricated by the printed circuit board (PCB) process. Measurement results indicate a large frequency ratio of 23.16, with the isolation between the low- and high-frequency bandpass filters exceeding 30 dB from dc to 50 GHz.