Polymer solar cells have been spotlighted due to their potential for low-cost manufacturing but their efficiency is still less than required for commercial application as lightweight/flexible modules. Forming a dipole layer at the electron-collecting interface has been suggested as one of the more attractive approaches for efficiency enhancement. However, only a few dipole layer material types have been reported so far, including only one non-ionic (charge neutral) polymer. Here we show that a further neutral polymer, namely poly(2-ethyl-2-oxazoline) (PEOz) can be successfully used as a dipole layer. Inclusion of a PEOz layer, in particular with a nanodot morphology, increases the effective work function at the electron-collecting interface within inverted solar cells and thermal annealing of PEOz layer leads to a state-of-the-art 10.74% efficiency for single-stack bulk heterojunction blend structures comprising poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′]dithiophene-alt-3-fluorothieno[3,4-b]thiophene-2-carboxylate] as donor and [6,6]-phenyl-C₇₁-butyric acid methyl ester as acceptor.

Ultrasensitive flexible sensors with multi-sensing functions are required for various applications in flexible electronics era. Here we demonstrate flexible polymer-dispersed liquid crystal (PDLC)-integrated-organic field-effect transistors (OFETs) (PDLC-i-OFETs), which sensitively respond to various stimulations including weak gas (air) flow, direct physical touch, light, and heat. The flexible PDLC-i-OFETs were fabricated by spin-coating the poly(methyl methacrylate) (PMMA)-dispersed 4,4’-pentyl-cyanobiphenyl (5CB) layers on the poly(3-hexylthiophene) (P3HT) channel layers of OFETs with 200 μm-thick poly(ethylene naphthalate) (PEN) substrates. The flexible PDLC-i-OFET devices could sense very weak nitrogen gas flow (0.3 sccm), which cannot be felt by human skins, and stably responded to direct physical touches (0.6~4.8 g load). In addition, the present devices showed very sensitive photoresponses to a visible light and exhibited excellent heat-sensing characteristics at a temperature of 25~70 °C. In particular, the present flexible PDLC-i-OFET devices could sense two different stimulations at the same time, indicative of promising multi-sensing capabilities.

Achievement of extremely high stability for inverted‐type polymer:fullerene solar cells is reported, which have bulk heterojunction (BHJ) layers consisting of poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dithiophene‐alt‐3‐fluorothieno[3,4‐b]thiophene‐2‐carboxylate] (PTB7‐Th) and [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC₇₁BM), by employing UV‐cut filter (UCF) that is mounted on the front of glass substrates. The UCF can block most of UV photons below 403 nm at the expense of ≈20% reduction in the total intensity of solar light. Results show that the PTB7‐Th:PC₇₁BM solar cell with UCF exhibits extremely slow decay in power conversion efficiency (PCE) but a rapidly decayed PCE is measured for the device without UCF. The poor device stability without UCF is ascribed to the oxidative degradation of constituent materials in the BHJ layers, which give rise to the formation of PC₇₁BM aggregates, as measured with high resolution and scanning transmission electron microscopy and X‐ray photoelectron spectroscopy. The device stability cannot be improved by simply inserting poly(ethylene imine) (PEI) interfacial layer without UCF, whereas the lifetime of the PEI‐inserted PTB7‐Th:PC₇₁BM solar cells is significantly enhanced when UCF is attached.

We report ‘broadband light-sensing’ all-polymer phototransistors with the nanostructured bulk heterojunction (BHJ) layers of visible (VIS) light-sensing electron-donating (p-type) polymer and near infrared (NIR) light-sensing electron-accepting (n-type) polymer. Poly[{2,5-bis-(2-ethylhexyl)-3,6-bis-(thien-2-yl)-pyrrolo[3,4-c]pyrrole-1,4-diyl}-co-{2,2′-(2,1,3-benzothiadiazole)]-5,5′-diyl}] (PEHTPPD-BT), which is synthesized via Suzuki coupling and employed as the n-type polymer, shows strong optical absorption in the NIR region (up to 1100 nm) in the presence of weak absorption in the VIS range (400 ~ 600 nm). To strengthen the VIS absorption, poly(3-hexylthiophene) (P3HT) is introduced as the p-type polymer. All-polymer phototransistors with the BHJ (P3HT:PEHTPPD-BT) layers, featuring a peculiar nano-domain morphology, exhibit typical p-type transistor characteristics and efficiently detect broadband (VIS ~ NIR) lights. The maximum corrected responsivity (without contribution of dark current) reaches up to 85 ~ 88% (VIS) and 26 ~ 40% (NIR) of theoretical responsivity. The charge separation process between P3HT and PEHTPPD-BT components in the highest occupied molecular orbital is proposed as a major working mechanism for the effective NIR sensing.

Low-cost detectors for sensing photons at a low light intensity are of crucial importance in modern science. Phototransistors can deliver better signals of low-intensity light by electrical amplification, but conventional inorganic phototransistors have a limitation owing to their high temperature processes in vacuum. In this work, we demonstrate organic phototransistors with polymer/polymer bulk heterojunction blend films (mixtures of p-type and n-type semiconducting polymers), which can be fabricated by inexpensive solution processes at room temperature. The key idea here is to effectively exploit hole charges (from p-type polymer) as major signaling carriers by employing p-type transistor geometry, while the n-type polymer helps efficient charge separation from excitons generated by incoming photons. Results showed that the present organic transistors exhibited proper functions as p-type phototransistors with ∼4.3 A W⁻¹ responsivity at a low light intensity (1 µW cm⁻²), which supports their encouraging potential to replace conventional cooled charge coupled devices (CCD) for low-intensity light detection applications.