Organic light-emitting diodes (OLEDs) are widely recognized as the forefront technology for displays and lighting technology. Now, the global OLED market is nearly mature, driven by the rising demand for superior displays in smartphones. In recent years, numerous strategies have been introduced and demonstrated to optimize the hole injection layer to further enhance the efficiency of OLEDs. In this paper, different methods of optimizing the hole injection layer were elucidated, including using a suitable hole injection material to minimize the hole injection barrier and match the energy level with the emission layer, exploring new preparation methods to optimize the structure of hole injection layer, and so on. Meanwhile, this article can help people to understand the current research progress and the challenges still faced in relation to the hole injection layer in OLEDs, providing future research directions to enhance the properties of OLEDs.

Flexible organic light-emitting diodes (FOLEDs) have promising potential for future wearable applications because of their exceptional mechanical flexibility. Silver nanowire (Ag NW) networks are the most promising candidates to replace indium tin oxide (ITO), which is limited by its poor bendability. In this study, three different methods including methanol impregnation, argon plasma treatment, and ultraviolet radiation were used to reduce the junction resistance of Ag NWs to optimize the flexible transparent electrodes (FTEs); which were prepared using Ag NWs and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS). Then, the optoelectronic properties of the FTEs were further improved by using a co-doped system of silver nanowires and silver nanoparticles (Ag NPs), the structure of which consisted of PET/Ag NWs: Ag NPs/PEDOT: PSS/DMSO. The largest FOM value of 1.42 × 10⁻² ohm⁻¹ and a low sheet resistance value of 13.86 ohm/sq were obtained using the optimized FTEs. The prepared FOLED based on the optimized FTEs had a luminous efficiency of 6.04 cd/A and a maximum EQE of 1.92%, and exhibited no observed decline in efficiency when reaching maximum luminance. After 500 bending tests, the luminance still reached 82% of the original value. It is demonstrated that the FTEs prepared via the co-doped system have excellent optoelectronic properties as well as high mechanical stability.