Well-aligned arrays of ZnO nanoneedles were fabricated using a simple vapor phase growth. The diameters of the nanoneedle tips are as small as several nanometers, which is highly in favor of the field emission. Field-emission measurements using the nanoneedle arrays as cathode showed emission current density as high as 2.4 mA/cm² under the field of 7 V/μm, and a very low turn-on field of 2.4 V/μm. Such a high emission current density is attributed to the high aspect ratio of the nanoneedles. The high emission current density, high stability, and low turn-on field make the ZnO nanoneedle arrays one of the promising candidates for field-emission displays.

Mechanical cleavage by Scotch tape was the first method to produce graphene and is still widely used in laboratories. However, a critical problem of this method is the extremely low yield. We have tailored ball milling conditions to produce gentle shear forces that produce high quality boron nitride (BN) nanosheets in high yield and efficiency. The in-plane structure of the BN nanosheets has not been damaged as shown by near edge X-ray absorption fine structure measurements. The benzyl benzoate acts as the milling agent to reduce the ball impacts and milling contamination. This method is applicable to any layered materials for producing nanosheets.

We report large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method. Silica was produced in the form of amorphous nanowires at a diameter of ∼15 nm and a length up to hundreds micrometers. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV. The intensity of the emission is two orders of magnitude higher than that of porous silicon. The SiONWs may have potential applications in high-resolution optical heads of scanning near-field optical microscope or nanointerconnections in future integrated optical devices.

We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires.