The enhancement of the reliability of the silicon-based III–V quantum well lasers, especially of those on an on-axis Si (001) substrate, is of great importance now a days for the development of Si-based photonic and even optoelectronic integrated circuits and is really quite challenging. As an experimental advancement, mainly by inserting a pair of InAlAs strained layers separately into the upper and lower AlGaAs cladding layers to effectively prevent the formation of the in-plane gliding misfit-dislocations within the boundary planes of the active region, the longest room-temperature and continuous-wave lifetime of the InGaAs/AlGaAs quantum well lasers on an on-axis Si (001) substrate with a cavity length of 1500 µm and a ridge width of 20 µm has been prolonged from a very initial record of ∼90 s to the present length longer than 31 min. While, the highest continuous-wave operation temperature of another one with a cavity length of 1000 µm and a ridge width of 10 µm has been shown as 103 °C with an extracted characteristic temperature of 152.7 K, further enhancement of the device reliability is still expected and would mainly depend on the level of the threading-dislocation-density reduction in the GaAs/Si virtual substrate.

The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is presented in this paper. By employing a SiN nucleation layer and a step-graded buffer, a high-quality AlGaN-based photodetector structure with a dislocation density of 2.4 × 10⁹/cm² is achieved. A double-temperature annealing technique is utilized to optimize the Ohmic contact of the n-type AlGaN. The fabricated UV photodetector attains a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W.

Vertical-cavity surface-emitting lasers (VCSELs) are essential for exhibiting single-transverse-mode output characteristics, which are critical for applications in quantum sensing, optical interconnection, and laser printing. In this study, we achieved stable single-transverse-mode lasing using extended-2λ-cavity with an oxide aperture diameter of 7.08 μm. The device demonstrated a high output power of 6.8 mW and a narrow linewidth of 49.8 MHz at room temperature. Additionally, it maintained stable single-mode emission at 794.8 nm and achieved a side-mode suppression ratio (SMSR) exceeding 40 dB within the temperature range of 25 °C~85 °C, thereby meeting the requirements of ⁸⁷Rb atom quantum sensors. The fabricated device obtained high-power and narrow linewidth single-transverse-mode operation by a monolithic extended cavity without introducing additional processing procedures, which is expected to promote the commercial viability of VCSELs in quantum sensing.