Graphene oxide (GO) possesses specific properties that are revolutionizing materials science, with applications extending from flexible electronics to advanced nanotechnology. A key method for harnessing GO’s potential is its laser-induced reduction, yet the exact mechanisms — photothermal versus photochemical effects — remain unclear. Herein, we discover the dominant role of photochemical reactions in the laser reduction of GO under visible light, challenging the prevailing assumption that photothermal effects are dominant. Employing a combination of Raman thermometry, X-ray photoelectron and photoluminescence spectroscopies, and electrical atomic force microscopy, we quantify the temperature and map the reduction process across micro and nano scales. Our findings demonstrate that the photochemical cleavage of oxygen-containing groups below a reduction threshold temperature is a decisive factor in GO reduction, leading to distinct characteristics that cannot be replicated by heating alone. This work clarifies the fundamental mechanisms of GO transformation under visible laser irradiation, highlighting the dominant role of photochemical processes. Distinguishing these subtleties enables the development of laser-reduced GO platforms for graphene-based applications compatible with industrial scales. We illustrate this potential by encoding information on GO surfaces as optical storage, allowing us to write binary sequences in long-term memory encoding invisible even through an optical microscope.

Structural electronics, as well as flexible and wearable devices are applications that are possible by merging polymers with metal nanoparticles. However, using conventional technologies, it is challenging to fabricate plasmonic structures that remain flexible. We developed three-dimensional (3D) plasmonic nanostructures/polymer sensors via single-step laser processing and further functionalization with 4-nitrobenzenethiol (4-NBT) as a molecular probe. These sensors allow ultrasensitive detection with surface-enhanced Raman spectroscopy (SERS). We tracked the 4-NBT plasmonic enhancement and changes in its vibrational spectrum under the chemical environment perturbations. As a model system, we investigated the sensor’s performance when exposed to prostate cancer cells’ media over 7 days showing the possibility of identifying the cell death reflected in the environment through the effects on the 4-NBT probe. Thus, the fabricated sensor could have an impact on the monitoring of the cancer treatment process. Moreover, the laser-driven nanoparticles/polymer intermixing resulted in a free-form electrically conductive composite that withstands over 1000 bending cycles without losing electrical properties. Our results bridge the gap between plasmonic sensing with SERS and flexible electronics in a scalable, energy-efficient, inexpensive, and environmentally friendly way.

Metallic nanoparticles are widely explored for boosting light-matter coupling, optoelectronic response, and improving photocatalytic performance of two-dimensional (2D) materials. However, the target area is restricted to either top or bottom of the 2D flakes. Here, we introduce an approach for edge-specific nanoparticle decoration via light-assisted reduction of silver ions and merging of silver seeds. We observe arrays of the self-limited in size silver nanoparticles along tungsten diselenide WSe₂ nanoribbon edges. The density of nanoparticles is tunable by adjusting the laser fluence. Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy are used to investigate the size, distribution, and photo-response of the deposited plasmonic nanoparticles on the quasi-one-dimensional nanoribbons. We report an on-surface synthesis path for creating mixed-dimensional heterostructures and heterojunctions with potential applications in opto-electronics, plasmonics, and catalysis, offering improved light matter coupling, optoelectronics response, and photocatalytic performance of 2D materials.

Tungsten diselenide (${\mathrm{WSe}}_2$) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to ${\mathrm{WSe}}_2$ remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to ${\mathrm{WSe}}_2$ for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal–oxide–semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional ${\mathrm{WSe}}_2$ field-effect transistors with multi-layer palladium diselenide (${\mathrm{PdSe}}_2$) as a contact material. We demonstrate that ${\mathrm{PdSe}}_2$ contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type ${\mathrm{WSe}}_2$ devices with ${\mathrm{PdSe}}_2$ van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the ${\mathrm{WSe}}_2$ under the contacts, enabling pinning of the threshold voltage to the valence band of ${\mathrm{WSe}}_2$, yielding pure p-type operation of the devices.