Direct deposition of graphene on substrates would avoid costly, time consuming and defect inducing transfer techniques. In this paper we used ultrathin films of Ni, with thickness ranging from 5 to 50 nm, as a catalytic surface on glass to seed and promote chemical vapor deposition (CVD) of graphene. Different regimes and dynamics were studied for various parameters including temperature and reaction time. When a critical temperature (700 °C) was reached, Ni films retracted and holes formed that are open to the glass surface, where graphene deposited. After CVD, the residual Ni could be etched away and the glass substrate with graphene regained maximum transparency (>90%). The fact that we could achieve low growth temperatures indicates the potential of the technique to widen the range of substrate materials over which graphene can be directly deposited. We demonstrated this by depositing graphene patterns on ultrathin, 100 μm thick, sheet of glass with low strain point (670 °C), particularly suitable for flexible electronic and optoelectronic devices.

We demonstrate direct growth of two-dimensional (2D) and three-dimensional (3D) graphene structures on glass substrates. By starting from catalytic copper nanoparticles of different densities and using chemical vapour deposition (CVD) techniques, different 2D and 3D morphologies can be obtained, including graphene sponge-like, nano-ball and conformal graphene structures. More important, we show that the initial copper template can be completely removed via sublimation during CVD and, if need be, subsequent metal etching. This allows optical transmissions close to the bare substrate, which, combined with electrical conductivity make the proposed technique very attractive for creating graphene with high surface to volume ratio for a wide variety of applications, including antiglare display screens, solar cells, light-emitting diodes, gas and biological plasmonic sensors.