Thin films with quantum defects are emerging as a potential platform for quantum applications. Quantum defects in some thin films arise due to structural imperfections, such as vacancies or impurities. These defects generate localized electronic states with unique optical and electronic properties. Crystal vacancies or defects that occur when atoms are missing from a crystal lattice can influence a material's quantum properties. In this study, we investigated inexpensive, complementary metal oxide semiconductor (CMOS) compatible materials with quantum defects suitable for room temperature applications. The experiments indicated 5ns, 15ns, and 17ns relaxation times for aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ) or alumina, and tin oxides (SnO _x ), respectively. For all these materials, distinct resonant peaks are observed at approximately 1.1GHz, 1.6GHz, 2.2GHz, and 2.7GHz at room temperature (i.e., 21°C). These peaks exhibit slight frequency shifts, corresponding to known defect locations and thin film material properties. This discovery may lead the way to reliable, cost-effective quantum applications in our daily lives.

Microelectromechanical systems (MEMS) ohmic contact switches are considered to be a promising candidate for wireless communication applications. The longevity of MEMS switches is directly related to the reliability and performance of microcontacts. In this work, an improved microcontact test fixture with high actuation rates (KHz) and highly precise position control (nm) and force (nN) control was developed. Here, we collected microcontact performance data from initial contact tests (ICT) and microcontact reliability data from cold switched tests (CST). To perform these tests with our test fixture, we fabricated MEMS microcontact test structures with relatively high Young’s modulus electroplated Nickel (Ni)-based, fixed–fixed beam structure with Au/RuO₂ bimetallic microcontacts. These structures were characterized for forces ranging from 200–1000 µN in ICT tests. In a CST test, the tested microcontact survived more than 200 million cycles at a 1 KHz cycle rate, with a stable contact resistance value ranging between 3.8–5.2 Ω. These experiments validate the potentiality of our microcontact test fixture, and will facilitate further investigation on advanced microcontacts to enhance the MEMS switch’s reliability.

The behavior of a sine wave propagated through thin films of aluminum nitride (AlN), aluminum oxide (Al2O3), and tin oxide (SnOx) with engineered buried defect sites may suggest quantum excitation and defect-mediated waveform modulations. Two distinct methods to induce these buried defects, etch pattern defects (EPD) and indentation pattern defects (IPD), were employed to detect these interactions. All the experiments were conducted at room temperature (21 °C) over a frequency range between 5 and 1000 kHz. In addition, EPD and IPD devices were composed of AlN, Al2O3, and SnOx. An inverse relationship between excitation frequency and voltage is observed for all devices. All these devices exhibited a relaxation time ranging between 0.2 and 0.75 µs. Devices without these engineered defect sites preserve the waveform integrity, emphasizing the impact of the buried defect sites. This research focuses on the relationship between defect type, excitation frequency, and voltage to understand the deeper mechanisms at play in these quantum defect-driven wave alterations in AlN, Al2O3, and SnOx thin films.