Deep-ultraviolet (DUV) nonlinear optical (NLO) crystals that can extend the output range of coherent light below 200 nm are pivotal materials for solid-state lasers. To date, KBe₂BO₃F₂ (KBBF) is the only usable crystal that can generate DUV coherent light by direct second harmonic generation (SHG), but the layered growth habit and toxic ingredients limit its application. Herein, we report a new fluoroborophosphate, (NH₄)₃B₁₁PO₁₉F₃ (ABPF), containing four different functional units: [BO₃], [BO₄], [BO₃F] and [PO₄]. ABPF exhibits a KBBF-like structure while eliminating the limitations of KBBF crystal. The unique [B₅PO₁₀F]_∞ layers enhance ABPF’s performance; for example, it has a large SHG response (1.2 × KDP) and a sufficient birefringence (0.088 at 1064 nm) that enables the shortest phase-matching wavelength to reach the DUV region. Meanwhile, the introduction of strong B-O-P covalent bonds decreases the layered growth habit. These findings will enrich the structural chemistry of fluoroborophosphate and contribute to the discovery of more excellent DUV NLO crystals.

Design and fabrication of new infrared (IR) nonlinear optical (NLO) materials with balanced properties are urgently needed since commercial chalcopyrite‐like (CL) NLO crystals are suffering from their intrinsic drawbacks. Herein, the first defect‐CL (DCL) alkali‐earth metal (AEM) selenide IR NLO material, DCL‐MgGa₂Se₄, has been rationally designed and fabricated by a structure prediction and experiment combined strategy. The introduction of AEM tetrahedral unit MgSe₄ effectively widens the band gap of DCL compounds. The title compound exhibits a wide band gap of 2.96 eV, resulting in a high laser induced damage threshold (LIDT) of ≈3.0 × AgGaS₂ (AGS). Furthermore, the compound shows a suitable second harmonic generation (SHG) response (≈0.9 × AGS) with a type‐I phase‐matching (PM) behavior and a wide IR transparent range. The results indicate that DCL‐MgGa₂Se₄ is a promising mid‐to‐far IR NLO material and give some insights into the design of new CL compound with outstanding IR NLO properties based on the AEM tetrahedra and the structure predication and experiment combined strategy.

A series of A ₂ SrM ^IV S ₄ compounds concurrently exhibiting wide bandgaps and good NLO responses were proven as promising IR NLO materials.