Nowadays, the need to monitor different physical variables is constantly increasing and can be used in different applications, from humidity monitoring to disease detection in living beings, using a local or wireless sensor network (WSN). The Internet of Things has become a valuable approach to climate monitoring, daily parcel monitoring, early disease detection, crop plant counting, and risk assessment. Herein, an autonomous energy wireless sensor network for monitoring environmental variables is proposed. The network’s tree topology configuration, which involves master and slave modules, is managed by microcontrollers embedded with sensors, constituting a key part of the WSN architecture. The system’s slave modules are equipped with sensors for temperature, humidity, gas, and light detection, along with a photovoltaic cell to energize the system, and a WiFi module for data transmission. The receiver incorporates a user interface and the necessary computing components for efficient data handling. In an open-field configuration, the transceiver range of the proposed system reaches up to 750 m per module. The advantages of this approach are its scalability, energy efficiency, and the system’s ability to provide real-time environmental monitoring over a large area, which is particularly beneficial for applications in precision agriculture and environmental management.

We reported the analysis and modeling of some conduction mechanisms in ultrathin aluminum oxide (Al₂O₃) films of 6 nm thickness, which are deposited by atomic layer deposition (ALD). This modeling included current-voltage measurements to metal-insulator-semiconductor (MIS) capacitors with gate electrode areas of 3.6 × 10⁻⁵ cm² and 6.4 × 10⁻⁵ cm² at room temperature. The modeling results showed the presence of ohmic conduction, Poole Frenkel emission, Schottky emission, and trap-assisted tunneling mechanisms through the Al₂O₃ layer. Based on extracted results, we measured a dielectric conductivity of 5 × 10⁻¹⁵ S/cm at low electric fields, a barrier height at oxide/semiconductor interface of 2 eV, and an energy trap level into bandgap with respect to the conduction band of 3.11 eV. These results could be affected by defect density related to oxygen vacancies, dangling bonds, fixed charges, or interface traps, which generate conduction mechanisms through and over the dielectric energy barrier. In addition, a current density model is developed by considering the sum of dominant conduction mechanisms and results based on the finite element method for electronic devices, achieving a good match with experimental data.

We studied the surface morphology and biocompatibility of hydrogenated amorphous silicon-germanium (a-Si_1-xGe_x:H) thin films prepared by Low Frequency Plasma Enhanced Chemical Vapor Deposition (LF-PECVD). These films were deposited on a Corning 2947 glass substrate having a thickness of 3 μm, the electrical performance showed a decreased electrical resistance for low regime voltage. The root mean square (RMS) surface roughness of the films was measured by atomic force microscopy (AFM) in a non-contact mode. A biocompatibility tests was carried out using primary cultures of dorsal root ganglion (DRG) of Wistar rats. The DRG neurons were incubated for 18 hours on a-Si_1-xGe_x:H thin films, and subsequent electrophysiological recording was performed. These neurons displayed typical ionic currents, including a fast-inward current at the beginning of voltage clamp pulse (Na⁺ current) and ensuing outward currents (K⁺ current). In current clamp experiments, depolarizing current pulse injection caused typical action potential discharge of the neurons. These results confirmed the feasibility of using a-Si_1-xGe_x:H thin films as a biocompatible material.

We present the design and implementation of a system access control using radio frequency identification (RFID) controlled by Arduino platform. The proposed system consists of a radio frequency reader (RC522), a set passive tags (identification cards), microcontroller Arduino MEGA, and graphical user interface (GUI) implemented in Matlab ^® . Through a GUI, it is possible to take control of access to the building and check the assistance; using identification cards, the user is able to access information of authorized personal. With this system is possible supervise, manage and report all personnel access.

In the present work, a study of the structural defects in HfO₂ thin films deposited by dip-coating on p-type silicon substrates treated under different conditions, such as air-annealing, ultraviolet irradiation, and simultaneous annealing–UV irradiation, is presented. HfO₂ thin films were analyzed by grazing incidence X-ray diffraction, Raman spectroscopy, optical fluorescence, atomic force microscopy, and UV-Vis diffuse reflectance. Films treated at 200 °C and 350 °C present peaks corresponding to monoclinic HfO₂. After UV treatment, the films became amorphous. The combination of annealing at 350 °C with UV treatment does not lead to crystalline peaks, suggesting that UV treatment causes extensive structural damage. Fluorescence spectroscopy and UV-Vis spectroscopy suggest that films present oxygen vacancies as their main structural defects. A reduction in oxygen vacancies after the second thermal treatment was observed, but in contrast, after UV irradiation, fluorescence spectroscopy indicated that more defects are created within the mobility gap, irrespective of the simultaneous annealing at 350 °C. An electronic band diagram was proposed assigning the observed fluorescence bands and optical transitions, which, in turn, explain the electrical properties of the films. The results suggest that the electronic structure of HfO₂ films can be tailored with a careful choice of thermal annealing conditions along with the controlled creation of defects using UV irradiation, which could open the way to multiple applications of the materials either in microelectronics, optoelectronics, as well as in photocatalytic/electrocatalytic applications such as photodegradation and hydrogen generation.

The development and improvement of thin film deposition techniques is an important research topic to obtain new materials at submicro and nano scale with high homogeneity and thickness control. Here, we designed and built an automated device for the deposition of binary or ternary compound films using Successive Ionic Layer Adsorption and Reaction (SILAR). The instrument is integrated by three different systems. The first system consists of a mobile platform of two degrees of freedom. The second part has an 8-bit microcontroller used to adjust the velocities along the horizontal and vertical axes. The third, the control system, uses a mobile app that can be implemented in smart devices, developed in free code software for programming and monitoring the main deposition parameters of the SILAR device such as the number of cycles, the immersion and emersion velocities, the residence time at each step, and the number of reactors. The performance of our instrument was verified through the deposition of PbS films, varying the number of deposition cycles to study the variations in the film thickness and structure, and assessed by profilometry, Raman spectroscopy, X-ray diffraction and atomic force microscopy. The system demonstrated is useful to obtain crystalline films with controllable thicknesses.