The electron transport layer (ETL) is critical to carrier extraction for perovskite solar cells (PSCs). Moreover, the morphology and surface condition of the ETL could influence the topography of the perovskite layer. ZnO, TiO₂, and SnO₂ were widely investigated as ETL materials. However, TiO₂ requires a sintering process under high temperature and ZnO has the trouble of chemical instability. SnO₂ possesses the advantages of low-temperature fabrication and high conductivity, which is critical to the performance of PSCs prepared under low temperature. Here, we optimized the morphology and property of SnO₂ by modulating the concentration of a SnO₂ colloidal dispersion solution. When adjusting the concentration of SnO₂ colloidal dispersion solution to 5 wt.% (in water), SnO₂ film indicated better performance and the perovskite film has a large grain size and smooth surface. Based on high efficiency (16.82%), the device keeps a low hysteresis index (0.23).

A high-quality Sn-based perovskite absorption layer and effective carrier transport are the basis for high-performance Sn-based perovskite solar cells. The suppression of Sn²⁺ oxidation and rapid crystallization is the key to obtaining high-quality Sn-based perovskite film. And interface engineering is an effective strategy to enhance carrier extraction and transport. In this work, tin fluoride (SnF₂) was introduced to the perovskite precursor solution, which can effectively modulate the crystallization and morphology of Sn-based perovskite layer. Furthermore, the hole-transporting layer of PEDOT:PSS was modified with CsI to enhance the hole extraction and transport. As a result, the fabricated inverted Sn-based perovskite solar cells demonstrated a power conversion efficiency of 7.53% with enhanced stability.

Perovskite light-emitting diodes (PeLEDs) have attracted tremendous attention due to their ideal optoelectronic properties, such as high color purity, high fluorescence quantum yield, and tunable light color. The perovskite layer plays a decisive role in the performance of PeLEDs and the solvent engineering of the perovskite layer is the key technological breakthrough in preparing high quality films. In this study, we have proposed the strategy of adding different amounts of solvents to the perovskite precursor solution to optimize the morphology of perovskite films and device performance. As a result, with the decreasing concentration of perovskite precursor solution, the perovskite film morphology is smoother and more favorable for carrier injection and combing, which induces an enhanced external quantum efficiency. The maximum luminance of PeLEDs was increased from 1667 cd/m² to 9857 cd/m² and the maximum current efficiency was increased from 6.7 cd/A to 19 cd/A. This work provides a trend to achieve improved film morphology and device performance for perovskite optoelectronic devices.