Fuling Tang

Prof. Dr. Fuling Tang

orcid

Research Focus & Metrics

Academic Career Length

18Years (2009-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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3 June 2020 in Journal of Materials Science
Verified
Journal Article
Closed access
PDF file
FAFawaz Alnoman Mohammed Ahmed
Fawaz Alnoman Mohammed Ahmed
HXHongtao Xue
Hongtao Xue
FTFuling Tang
Fuling Tang
JAJun-Peng An
Jun-Peng An
YLYa-Qiao Luo
Ya-Qiao Luo
JRJunqiang Ren
Junqiang Ren

1 March 2021 in Journal of Materials Research and Technology
Verified
Journal Article
Open access
HXHongtao Xue
Hongtao Xue
YLYaqiao Luo
Yaqiao Luo
FTFuling Tang
Fuling Tang
XYXuefeng Yu
Xuefeng Yu
XLXuefeng Lu
Xuefeng Lu
JRJunqiang Ren
Junqiang Ren

5 October 2019 in Physical Chemistry Chemical Physics
Verified
Journal Article
Closed access
PDF file
JAJunpeng An
Junpeng An
HJHaiyan Jiang
Haiyan Jiang
YTYing Tian
Ying Tian
HXHongtao Xue
Hongtao Xue
FTFuling Tang
Fuling Tang
As a light absorbing material of perovskite solar cells, Mn-doped CsPbI2Br has a better phase stability than the undoped one. In order to deeply understand the doping mechanism of Mn, the effect of substitutional and interstitial Mn doping on the structural, electronic and optical properties of CsPbI2Br has been investigated by first-principles calculations based on density functional theory. It is found that the binding energy of both the substitutional and the interstitial Mn-doped CsPbI2Br is negative and the binding energy difference between them is only 2.8 meV, which indicates that both the substitutional and the interstitial doping structures should be stable for Mn-doped CsPbI2Br and the latter is slightly preferred over the former due to the lower binding energy. The lattice parameters of CsPbI2Br change oppositely for two Mn-doping cases. Based on the comparative analysis of the electronic structures for CsPbI2Br and Mn-doped CsPbI2Br, we found that the substitutional doping of Mn introduces intermediate bands near the Fermi level, making CsPbI2Br an intermediate band semiconductor; for the interstitial Mn-doped CsPbI2Br the Fermi level enters conduction bands, making it an n-type semiconductor material with enhanced conductivity. The complex dielectric function and the absorption spectrum of Mn-doped and undoped CsPbI2Br were calculated and are basically consistent with the experimental results.

1 July 2016 in Journal of Semiconductors
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Journal Article
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FSFengjuan Si
Fengjuan Si
FTFuling Tang
Fuling Tang
HXHongtao Xue
Hongtao Xue
RQRongfei Qi
Rongfei Qi

30 October 2022 in Journal of Materials Research and Technology
Verified
Journal Article
Open access
CLChao Lei
Chao Lei
HXHongtao Xue
Hongtao Xue
FTFuling Tang
Fuling Tang
XLXu Luo
Xu Luo

23 March 2023 in Vacuum
Verified
Journal Article
Closed access
YSYanyan Shi
Yanyan Shi
HXHongtao Xue
Hongtao Xue
FTFuling Tang
Fuling Tang
XLXuefeng Lu
Xuefeng Lu
JRJunqiang Ren
Junqiang Ren
JLJunchen Li
Junchen Li