The 21st century demands the rapid development of energy storage devices and systems that can cater to our daily energy needs of wearable devices in particular and electric vehicles in a large context. The advent of nanostructured materials has urged the scientific community and industry to take a renewed interest in developing electrochemical supercapacitors to nurture the energy needs of wearables and electric vehicles. Transition metal dichalcogenides (TMDs) are proposed to play a key role as active electrode materials in supercapacitors enabled by their large surface area and variable oxidation states. These properties enable them to store significant energy via electrical double layer and pseudocapacitive charge storage mechanisms. Herein, we discuss the recent advances in the development and the electrochemical performances of the TMD based supercapacitor electrodes. These electrodes range from those made in different nanoscale form factors to those exhibiting fascinating structural/electronic properties. The synergistic effects between TMDs and other materials in hybrid electrode designs and asymmetric configurations to meet the demand for high energy density requirements of modern electronic devices have been discussed in detail. Finally, the opportunities, as well as the challenges in TMD based supercapacitor research frontiers are highlighted.

Organic-inorganic halide perovskite quantum dots (PQDs) constitute an attractive class of materials for many optoelectronic applications. However, their charge transport properties are inferior to materials like graphene. On the other hand, the charge generation efficiency of graphene is too low to be used in many optoelectronic applications. Here, we demonstrate the development of ultrathin phototransistors and photonic synapses using a graphene-PQD (G-PQD) superstructure prepared by growing PQDs directly from a graphene lattice. We show that the G-PQDs superstructure synchronizes efficient charge generation and transport on a single platform. G-PQD phototransistors exhibit excellent responsivity of 1.4 × 10⁸ AW^–1 and specific detectivity of 4.72 × 10¹⁵ Jones at 430 nm. Moreover, the light-assisted memory effect of these superstructures enables photonic synaptic behavior, where neuromorphic computing is demonstrated by facial recognition with the assistance of machine learning. We anticipate that the G-PQD superstructures will bolster new directions in the development of highly efficient optoelectronic devices.

This review describes the recent developments on the synthesis methods and properties of boron carbon nitride (BCN). The supercapacitor electrode preparation and testing of BCN and BCN-based hybrids/heterostructures/nanocomposites are also included.