To study the physical property effects of the laser on GaInP/GaAs/Ge solar cells and their sub-cell layers, a pulsed laser with a wavelength of 532 nm was used to irradiate the solar cells under various energy conditions. The working performance of the cell was measured with a source meter. The electroluminescence (EL) characteristics were assessed using an ordinary and an infrared camera. Based on the detailed balance theory, in the voltage characteristics of an ideal pristine cell, the GaInP layer made the most significant voltage contribution, followed by the GaAs layer, with the Ge layer contributing the least. When a bias voltage was applied to the pristine cell, the top GaInP cell emitted red light at 670 nm, the middle GaAs cell emitted near-infrared light at 926 nm, and the bottom Ge cell emitted infrared light at 1852 nm. In the experiment, the 532 nm laser wavelength within the response spectrum bands of the GaInP layer and the laser passed through the glass cover slip and directly interacted with the GaInP layer. The experimental results indicated that the GaInP layer first exhibited different degrees of damage under laser irradiation, and the cell voltage was substantially attenuated. The GaInP/GaAs/Ge solar cell showed a decrease in electrical and light emission characteristics. As the laser energy increased, the cell’s damage intensified, gradually leading to a loss of photoelectric conversion capability, the near-complete disappearance of red light emission, and a gradual degradation of near-infrared emission properties. The EL imaging revealed varying damage states across the triple-junction gallium arsenide solar cell’s sub-cells.

To study the interference effect of the laser in motion mode on a CCD, the continuous laser with the wavelength of 532 nm at different motion speeds was used to scan the CCD. The experimental results show that the crosstalk phenomenon produced by static and dynamic irradiation is significantly different. When the continuous laser statically radiates the CCD, the vertical crosstalk line is observed in the output image. The gray values of the crosstalk line are divided into two stages, with the increase of the laser fluence: linear increase and saturation, which correspond to different formation mechanisms of the crosstalk lines, respectively. In addition, when the irradiation duration of the static laser is less than the integration time of CCD, the effect of delay time on the spatial distribution of the crosstalk line is identified. In addition, when the laser irradiates the CCD at different scanning speeds, crosstalk lines with certain slopes are observed. The slope of the crosstalk line is determined by the scanning speed of the continuous laser and the integration time of the CCD. The results show that the delay time and the irradiation position have important effects on the spatial distribution of the laser spot and crosstalk lines.