Nannan Han

Dr. Nannan Han


Research Focus & Metrics

Academic Career Length

12Years (2015-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 October 2016 in Progress in Materials Science
Verified
Journal Article
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JZJijun Zhao
Jijun Zhao
HLHongsheng Liu
Hongsheng Liu
ZYZhiming Yu
Zhiming Yu
RQRuge Quhe
Ruge Quhe
SZSi Zhou
Si Zhou
KWKehui Wu
Kehui Wu

26 January 2015 in RSC Advances
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Journal Article
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HLHongsheng Liu
Hongsheng Liu
NHNannan Han
Nannan Han
JZJijun Zhao
Jijun Zhao
Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices. In experiments, field effect transistors (FET) based on the MoS2 monolayer are sensitive to environmental gases, especially O2. Thus, the oxidation of monolayer TMDs is a critical concern. By first-principles calculations, we reveal that a perfect single-layer sheet of TMDs stays intact when exposed in O2 due to the weak physical adsorption of O2. However, O2 can be chemically adsorbed onto the monolayer of TMDs (including MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2) with single vacancies of chalcogen, which are the most common defects in realistic TMD materials. The adsorption configurations and dissociation behavior of the O2 molecule at vacancy sites, as well as the possible diffusion behavior of oxygen adatoms on the TMD monolayer surface were explored. Oxidation significantly influenced the electronic properties of a defective MoS2 monolayer, while other defective TMD monolayers (especially MoTe2 and WTe2) suffered less from oxidation. Our theoretical results provide valuable atomistic insight into the oxidation of TMD monolayers and are useful for the future design of TMD-based 2D devices.

13 March 2017 in Journal of Materials Chemistry C
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Journal Article
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KCKai Cheng
Kai Cheng
YGYu Guo
Yu Guo
NHNannan Han
Nannan Han
YSYan Su
Yan Su
JZJunfeng Zhang
Junfeng Zhang
JZJijun Zhao
Jijun Zhao
Band alignments of lateral heterostructures of group-IV monochalcogenides.

17 March 2023 in Science Advances
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Journal Article
Closed access
MZMingwen Zhang
Mingwen Zhang
NHNannan Han
Nannan Han
JZJiachen Zhang
Jiachen Zhang
JWJing Wang
Jing Wang
XCXiaoqing Chen
Xiaoqing Chen
GXgan xuetao
gan xuetao
Van der Waals (vdW) stacking of two-dimensional (2D) materials to create artificial structures has enabled remarkable discoveries and novel properties in fundamental physics. Here, we report that vdW stacking of centrosymmetric 2D materials, e.g., bilayer MoS 2 (2LM) and monolayer graphene (1LG), could support remarkable second-harmonic generation (SHG). The required centrosymmetry breaking for second-order hyperpolarizability arises from the interlayer charge transfer between 2LM and 1LG and the imbalanced charge distribution in 2LM, which are verified by first-principles calculations, Raman spectroscopy, and polarization-resolved SHG. The strength of SHG from 2LM/1LG is of the same order of magnitude as that from the monolayer MoS 2 , which is well recognized with strong second-order nonlinearity. The emergent SHG reveals that the interlayer charge transfer can effectively modify the symmetry and nonlinear optical properties of 2D heterostructures. It also indicates the great opportunity of SHG spectroscopy for characterizing interlayer coupling in vdW heterostructures.

22 November 2017 in Journal of the American Chemical Society
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Journal Article
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YQYue Qi
Yue Qi
CMCaixia Meng
Caixia Meng
XXXiaozhi Xu
Xiaozhi Xu
BDBing Deng
Bing Deng
NHNannan Han
Nannan Han
ZLZhongfan Liu
Zhongfan Liu

16 August 2017 in The Journal of Physical Chemistry C
Verified
Journal Article
Closed access
NHNannan Han
Nannan Han
NGNan Gao
Nan Gao
JZJijun Zhao
Jijun Zhao