In the context of the development of silicon photonics, various Ti- and Ni-based alloyed metallizations have been investigated for the purpose of forming low resistivity and Si CMOS-compatible contacts to n-InP. The innovative Ni₂P metallization combined with an in situ Ar⁺ preclean represents the most suitable available solution for the formation of ohmic contacts with a specific contact resistivity as low as $4.3 x 10⁻⁶ Ω$.cm² on such a semiconductor. The latter additionally presents the advantage of being stable at least up to 350 celsius and could therefore withstand additional integration processes conducted at this temperature.

Area selective deposition (ASD) is a promising IC fabrication technique to address misalignment issues arising in a top–down litho-etch patterning approach. ASD can enable resist tone inversion and bottom–up metallization, such as via prefill. It is achieved by promoting selective growth in the growth area (GA) while passivating the non-growth area (NGA). Nevertheless, preventing undesired particles and defect growth on the NGA is still a hurdle. This work shows the selectivity of Ru films by passivating the Si oxide NGA with self-assembled monolayers (SAMs) and small molecule inhibitors (SMIs). Ru films are deposited on the TiN GA using a metal-organic precursor tricarbonyl (trimethylenemethane) ruthenium (Ru TMM(CO)₃) and O₂ as a co-reactant by atomic layer deposition (ALD). This produces smooth Ru films (<0.1 nm RMS roughness) with a growth per cycle (GPC) of 1.6 Å/cycle. Minimizing the oxygen co-reactant dose is necessary to improve the ASD process selectivity due to the limited stability of the organic molecule and high reactivity of the ALD precursor, still allowing a Ru GPC of 0.95 Å/cycle. This work sheds light on Ru defect generation mechanisms on passivated areas from the detailed analysis of particle growth, coverage, and density as a function of ALD cycles. Finally, an optimized ASD of Ru is demonstrated on TiN/SiO₂ 3D patterned structures using dimethyl amino trimethyl silane (DMA-TMS) as SMI.