To meet various application requirements, it is important to enable an improvement of a-C structure and properties, such as hardness, adhesion, and wear resistance. In this study, we used the Raman spectroscopy to investigate the a-C thin films structure dependence on the different deposition parameters. The effect of nitrogen, argon, and hydrogen gas flow rate was analyzed to determine the influence on the film properties. The change in the gas type, combination, and flow had a significant influence on the D and G bands of the a-C Raman spectra. The addition of N₂into the chamber promoted the sp²creation, while with adding hydrogen the layer contained more sp³bonds. The depositions of a-C thin films were carried out in pulsed arc discharge vacuum installation. Micro-Raman measurements of the deposited materials were performed using an ISA Dilor-Jobin Yvon-Spex Labram confocal system with 632.8 nm radiation from a He-Ne laser using a back-scattering geometry.

New screen-printed sensor with a boron-doped diamond working electrode (SP/BDDE) was fabricated using a large-area linear antenna microwave chemical deposition vapor system (LA-MWCVD) with a novel precursor composition. It combines the advantages of disposable printed sensors, such as tailored design, low cost, and easy mass production, with excellent electrochemical properties of BDDE, including a wide available potential window, low background currents, chemical resistance, and resistance to passivation. The newly prepared SP/BDDEs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. Their electrochemical properties were investigated by cyclic voltammetry and electrochemical impedance spectroscopy using inner sphere ([Fe(CN)₆]^4−/3−) and outer sphere ([Ru(NH₃)₆]^2+/3+) redox probes. Moreover, the applicability of these new sensors was verified by analysis of the anti-inflammatory drug lornoxicam in model and pharmaceutical samples. Using optimized differential pulse voltammetry in Britton–Robinson buffer of pH 3, detection limits for lornoxicam were 9 × 10⁻⁸ mol L⁻¹. The oxidation mechanism of lornoxicam was investigated using bulk electrolysis and online electrochemical cell with mass spectrometry; nine distinct reaction steps and corresponding products and intermediates were identified.