The perovskite solar cell has emerged rapidly in the field of photovoltaics as it combines the merits of low cost, high efficiency, and excellent mechanical flexibility for versatile applications. However, there are significant concerns regarding its operational stability and mechanical robustness. Most of the previously reported approaches to address these concerns entail separate engineering of perovskite and charge-transporting layers. Herein we present a holistic design of perovskite and charge-transporting layers by synthesizing an interpenetrating perovskite/electron-transporting-layer interface. This interface is reaction-formed between a tin dioxide layer containing excess organic halide and a perovskite layer containing excess lead halide. Perovskite solar cells with such interfaces deliver efficiencies up to 22.2% and 20.1% for rigid and flexible versions, respectively. Long-term (1000 h) operational stability is demonstrated and the flexible devices show high endurance against mechanical-bending (2500 cycles) fatigue. Mechanistic insights into the relationship between the interpenetrating interface structure and performance enhancement are provided based on comprehensive, advanced, microscopic characterizations. This study highlights interface integrity as an important factor for designing efficient, operationally-stable, and mechanically-robust solar cells.

The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide and CuInP₂S₆ (CIPS) van der Waals (vdW) heterostructure. The vdW NC-FET provides an average subthreshold swing (SS) less than the Boltzmann’s limit for over seven decades of drain current, with a minimum SS of 28 mV dec⁻¹. Negligible hysteresis is achieved in NC-FETs with the thickness of CIPS less than 20 nm. A voltage gain of 24 is measured for vdW NC-FET logic inverter. Flexible vdW NC-FET is further demonstrated with sub-60 mV dec⁻¹ switching characteristics under the bending radius down to 3.8 mm. These results demonstrate the great potential of vdW NC-FET for ultra-low-power and flexible applications.

The emergence of low-dimensional nanomaterials has brought revolutionized development of magnetism, as the size effect can significantly influence the spin arrangement. Since the first demonstration of truly two-dimensional magnetic materials (2DMMs) in 2017, a wide variety of magnetic phases and associated properties have been exhibited in these 2DMMs, which offer a new opportunity to manipulate the spin-based devices efficiently in the future. Herein, we focus on the recent progress of 2DMMs and heterostructures in the aspects of their structural characteristics, physical properties, and spintronic applications. Firstly, the microscopy characterization of the spatial arrangement of spins in 2D lattices is reviewed. Afterwards, the optical probes in the light-matter-spin interactions at the 2D scale are discussed. Then, particularly, we systematically summarize the recent work on the electronic and spintronic devices of 2DMMs. In the section of electronic properties, we raise several exciting phenomena in 2DMMs, i.e., long-distance magnon transport, field-effect transistors, varying magnetoresistance behavior, and (quantum) anomalous Hall effect. In the section of spintronic applications, we highlight spintronic devices based on 2DMMs, e.g., spin valves, spin-orbit torque, spin field-effect transistors, spin tunneling field-effect transistors, and spin-filter magnetic tunnel junctions. At last, we also provide our perspectives on the current challenges and future expectations in this field, which may be a helpful guide for theorists and experimentalists who are exploring the optical, electronic, and spintronic properties of 2DMMs.