Chemical vapor deposition (CVD) is one of the most preferred technique of graphene fabrication. However, it still faces some challenges, such as contamination with white particulate impurities which occurs commonly when furnaces with quartz tubes are used in the process. In this work, the source of contamination on copper substrates was traced and tackled in three stages of the graphene fabrication process. The cleaning, annealing, and finally the fabrication stage was studied. No evidence was found to support that copper foil or cleaning tools were sources of the contamination. XPS, EDS and XRD results reveal that the white impurities are silicates, formed due to the phase transition of quartz at elevated temperatures in presence of copper vapor and oxygen gas. It was evident that due to the appearance of this contamination, quartz tubes are not ideal for use in graphene synthesis. However, if unavoidable this study proposes a special substrate configuration which has been found to suppress the contamination during fabrication.

In the future, DW memory will replace conventional storage memories with high storage capacity and fast read/write speeds. The only failure in DW memory arises from DW thermal fluctuations at pinning sites. This work examines, through calculations, the parameters that might help control DW thermal stability at the pinning sites. It is proposed to design a new scheme using a stepped area of a certain depth (d) and length (λ). The study reveals that DW thermal stability is highly dependent on the geometry of the pinning area (d and λ), magnetic properties such as saturation magnetization (Ms) and magnetic anisotropy energy (Ku), and the dimensions of the nanowires. For certain values of d and λ, DWs remain stable at temperatures over 500 K, which is beneficial for memory applications. Higher DW thermal stability is also achieved by decreasing nanowire thickness to less than 10 nm, making DW memories stable below 800 K. Finally, our results help to construct DW memory nanodevices with nanodimensions less than a 40 nm width and less than a 10 nm thickness with high DW thermal stability.

Magnetic skyrmion random switching and structural stability are critical limitations for storage data applications. Enhancing skyrmions’ magnetic properties could improve their thermal structural stability. Hence, micromagnetic calculation was carried out to explore the thermal nucleation and stability of skyrmions in magnetic nanodevices. Different magnetic properties such as uniaxial magnetic anisotropy energy (Ku), saturation magnetization (Ms) and Dzyaloshinskii—Moriya interaction (DMI) were used to assess the thermal stability of skyrmions in magnetic nanowires. For some values of Ms and Ku, the results verified that the skyrmion structure is stable at temperatures above 800 K, which is higher than room temperature. Additionally, manipulating the nanowire geometry was found to have a substantial effect on the thermal structural stability of the skyrmion in storage nanodevices. Increasing the nanowire dimensions, such as length or width, enhanced skyrmions’ structural stability against temperature fluctuations in nanodevices. Furthermore, the random nucleation of the skyrmions due to the device temperature was examined. It was shown that random skyrmion nucleation occurs at temperature values greater than 700 K. These findings make skyrmion devices suitable for storage applications.

This study investigates the thermal pinning and depinning behaviors of vortex domain walls (VWs) in constricted magnetic nanowires, focusing on the influence of intrinsic magnetic properties on VW stability under thermal stress. Using micromagnetic simulations, we analyze the roles of saturation magnetization (Ms), uniaxial magnetic anisotropy (Ku), and nanowire geometry in determining VW thermal stability. The modeled nanowire has dimensions of 200 nm (width), 30 nm (thickness), and a 50 nm constriction length, chosen based on the dependence of VW formation on nanowire geometry. Our results show that increasing Ms and K_u enhances VW pinning, while thermal fluctuations at higher temperatures promote VW depinning. We demonstrate that temperature and magnetic parameters significantly impact VW structural stability, offering insights for designing high-reliability nanowire-based memory devices. These findings contribute to optimizing nanowire designs for thermally stable, energy-efficient spintronic memory systems.

Magnetic nanowires with domain walls (DWs) play a crucial role in the advancement of next-generation memory and spintronic devices. Understanding the thermal effects on domain wall behavior is essential for optimizing performance and stability. This study investigates the thermal chirality-dependent dynamics and pinning of transverse domain walls (TDWs) in Z-junction nanowires using micromagnetic simulations. The analysis focuses on head-to-head (HHW) and tail-to-tail (TTW) domain walls with up and down chirality under varying thermal conditions. The results indicate that higher temperatures reduce the pinning strength and depinning current density, leading to enhanced domain wall velocity. At 200 K, the HHW_down domain wall depins at a critical current density of 1.2 × 10¹¹ A/m², while HHW_up requires a higher depinning temperature, indicating stronger pinning effects. Similarly, the depinning temperature (T_d) increases with Z-junction depth (d), reaching 300 K at d = 50 nm, while increasing Z-junction (λ) weakens pinning, reducing T_d to 150 K at λ = 50 nm. Additionally, the influence of Z-junction geometry and magnetic properties, such as saturation magnetization (M_s) and anisotropy constant (K_u), is examined to determine their effects on thermal pinning and depinning. These findings highlight the critical role of chirality and thermal activation in domain wall motion, offering insights into the design of energy-efficient, high-speed nanowire-based memory devices.

In this study, we investigate the thermal pinning and depinning behaviors of vortex domain walls (VDWs) in constricted magnetic nanowires, with a focus on potential applications in storage memory nanodevices. Using micromagnetic simulations and spin transfer torque, we examine the impacts of device temperature on VDW transformation into a transverse domain wall (TDW), mobility, and thermal strength pinning at the constricted area. We explore how thermal fluctuations influence the stability and mobility of domain walls within stepped nanowires. The thermal structural stability of VDWs and their pinning were investigated considering the effects of the stepped area depth (d) and its length (λ). Our findings indicate that the thermal stability of VDWs in magnetic stepped nanowires increases with decreasing the depth of the stepped area (d) and increasing nanowire thickness (th). For th ≥ 50 nm, the stability is maintained at temperatures ≥ 1200 K. In the stepped area, VDW thermal pinning strength increases with increasing d and decreasing λ. For values of d ≥ 100 nm, VDWs depin from the stepped area at temperatures ≥ 1000 K. Our results reveal that thermal effects significantly influence the pinning strength at constricted sites, impacting the overall performance and reliability of magnetic memory devices. These insights are crucial for optimizing the design and functionality of next-generation nanodevices. The stepped design offers numerous advantages, including simple fabrication using a single electron beam lithography exposure step on the resist. Additionally, adjusting λ and d allows for precise control over the pinning strength by modifying the dimensions of the stepped areas.