In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resulting from low arsenic surface coverage. We identify one of the modes as that showing good properties found in previous work. As the morphology of the fabricated QDs does not hint at outstanding properties, we attribute the good performance of this sample to the low impurity levels in the matrix material and the ability of n- and p-doped contact regions to stabilize the charge state. We present the challenges met in characterizing the sample with ensemble photoluminescence spectroscopy caused by the photonic structure used. We show two straightforward methods to overcome this hurdle and gain insight into QD emission properties.

In this paper, we validate two theoretical formula used to characterize thermal transport of superlattices at different temperatures. These formulas are used to measure cross-plane thermal conductivity and thermal boundary resistance, when it is not possible to obtain heat capacity or thermal diffusivity and in-plane thermal conductivity. We find that the most common formula for calculating thermal diffusivity and heat capacity (and density) can be used in a temperature range of −50 °C to 50 °C. This confirms that the heat capacity in the very thin silicon membranes is the same as in bulk silicon, as was preliminary investigated using an elastic continuum model. Based on the obtained thermal parameters, we can fully characterize the sample using a new procedure for characterization of the in-plane and cross-plane thermal transport properties of thin-layer and superlattice semiconductor samples.