Deltex-3-like (DTX3L) stimulates metastasis of melanoma through FAK/PI3K/AKT but not MEK/ERK pathway Deltex-3-like (DTX3L) stimulates metastasis of melanoma through FAK/PI3K/AKT but not MEK/ERK pathway

Health risk for well drinking water is a worldwide problem. Our recent studies showed increased toxicity by exposure to barium alone (≤700 µg/L) and coexposure to barium (137 µg/L) and arsenic (225 µg/L). The present edition of WHO health-based guidelines for drinking water revised in 2011 has maintained the values of arsenic (10 µg/L) and barium (700 µg/L), but not elements such as manganese, iron and zinc. Nevertheless, there have been very few studies on barium in drinking water and human samples. This study showed significant correlations between levels of arsenic and barium, but not its homologous elements (magnesium, calcium and strontium), in urine, toenail and hair samples obtained from residents of Jessore, Bangladesh. Significant correlation between levels of arsenic and barium in well drinking water and levels in human urine, toenail and hair samples were also observed. Based on these results, a high-performance and low-cost adsorbent composed of a hydrotalcite-like compound for barium and arsenic was developed. The adsorbent reduced levels of barium and arsenic from well water in Bangladesh and Vietnam to <7 µg/L within 1 min. Thus, we have showed levels of arsenic and barium in humans and propose a novel remediation system.

Photoelectrochemical properties of 4H-, 6H-, and 3C-SiC were characterized for a self-driven water-splitting cell. Correspondingly, the band edge potentials of SiC polytypes were estimated from the results of capacitance-voltage measurement in different electrolytes. The estimated potentials indicate that these polytypes were able to split water. The photocurrents of the epitaxially grown samples were found to be larger than the bulk samples. The solar-to-hydrogen conversion efficiency of p-type SiC was estimated for the first time for a self-driven two-electrode system.

4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking-faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.