Cristina Miccoli obtained a master’s degree in physics (material physics curriculum) in 2006 at the University of Catania. In 2010, she received a Ph.D. in physics. Her research topic was continuum charge transport in gallium nitride (GaN) bulk and aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructures. She works at STMicroelectronics as a technical staff member with specific skills in TCAD simulations. She collaborates with design teams, CAD developers and suppliers, universities, and research centers to validate and calibrate physical simulations, methods, and models for new devices and process steps.