Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics^1,2,3. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal–oxide–semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (κ values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends⁴ the development of dielectrics with κ values of less than 2 by 2028. Existing low-κ materials (such as silicon oxide derivatives, organic compounds and aerogels) have κ values greater than 2 and poor thermo-mechanical properties⁵. Here we report three-nanometre-thick amorphous boron nitride films with ultralow κ values of 1.78 and 1.16 (close to that of air, κ = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics.

Hematite has a great potential as a photoanode for photoelectrochemical (PEC) water splitting by converting solar energy into hydrogen fuels, but the solar-to-hydrogen conversion efficiency of state-of-the-art hematite photoelectrodes are still far below the values required for practical hydrogen production. Here, we report a core-shell formation of gradient tantalum-doped hematite homojunction nanorods by combination of hydrothermal regrowth strategy and hybrid microwave annealing, which enhances the photocurrent density and reduces the turn-on voltage simultaneously. The unusual bi-functional effects originate from the passivation of the surface states and intrinsic built-in electric field by the homojunction formation. The additional driving force provided by the field can effectively suppress charge–carrier recombination both in the bulk and on the surface of hematite, especially at lower potentials. Moreover, the synthesized homojunction shows a remarkable synergy with NiFe(OH)_x cocatalyst with significant additional improvements of photocurrent density and cathodic shift of turn-on voltage. The work has nicely demonstrated multiple collaborative strategies of gradient doping, homojunction formation, and cocatalyst modification, and the concept could shed light on designing and constructing the efficient nanostructures of semiconductor photoelectrodes in the field of solar energy conversion.