N-type semiconductor indium tin oxide (ITO) nanoparticles are used to effectively suppress the fluorescence blinking of single near-infrared-emitting CdSeTe/ZnS core/shell quantum dots (QDs), where the ITO could block the electron transfer from excited QDs to trap states and facilitate more rapid regeneration of neutral QDs by back electron transfer. The average blinking rate of QDs is significantly reduced by more than an order of magnitude and the largest proportion of on-state is 98%, while the lifetime is not considerably reduced. Furthermore, an external electron transfer model is proposed to analyze the possible effect of radiative, nonradiative, and electron transfer pathways on fluorescence blinking. Theoretical analysis based on the model combined with measured results gives a quantitative insight into the blinking mechanism.

Intrinsic photobleaching and photoluminescence (PL) intermittency of single quantum dots (QDs), originating from photo-oxidation and photo-ionization respectively, are roadblocks for most single-dot applications. Here, we effectively suppress the photobleaching and the PL intermittency of single near-infrared emitting QDs with p-phenylenediamine (PPD). The PPD cannot only be used as a high-efficient reducing agent to remove reactive oxygen species around QDs to suppress the photo-oxidation, but can also bond with the surface defect sites of single QDs to reduce electron trap states to suppress the photo-ionization. It is shown that the survival time of single QDs, the on-state probability of PL intensity traces, and the total number of emitted photons are significantly increased for single QDs in PPD compared with that on glass coverslip.