Investigations of organic–inorganic metal halide perovskite materials have attracted extensive attention due to their excellent properties including bandgap tunability, long charge diffusion length, and outstanding optoelectronic merits. Organic–inorganic metal halide perovskites are demonstrated to be promising materials in a variety of optoelectronic applications including photodetection, energy harvesting, and light‐emitting devices. As perovskite solar cells are well studied in literature, here, the recent developments of organic–inorganic metal halide perovskite materials in optoelectronic devices beyond solar cells are summarized. The preparation of organic–inorganic metal halide perovskite films is introduced. Applications of organic–inorganic metal halide perovskite materials in light‐emitting diodes, photodetectors, and lasers are then highlighted. Finally, the recent advances in these optoelectronic applications based on organic–inorganic metal halide materials are summarized and the future perspectives are discussed.

Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.

This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS₂. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS₂ is featured with a 1.9 eV gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed, many MoS₂ devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the MoS₂-based FETs are presented. Engineering of MoS₂-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in MoS₂-based FETs, which is crucial for developing electronic and optoelectronic devices.